MBE growth of CdTe epilayers on InSb(111) substrates
We report a study of CdTe layers grown on InSb(111) substrates by molecular beam epitaxy. CdTe/InSb heterostructures prepared under different conditions were characterized in-situ by reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy. As ex-situ characterization we u...
| Autores: | , , |
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| Tipo de documento: | artigo |
| Estado: | Versão publicada |
| Data de publicação: | 1999 |
| País: | México |
| Recursos: | Instituto Politécnico Nacional |
| Repositório: | Redalyc-IPN |
| OAI Identifier: | oai:redalyc.org:94211324028 |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=94211324028 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Física, Astronomía y Matemáticas AFM CdTe InSb RHEED Raman spectroscopy |
| Resumo: | We report a study of CdTe layers grown on InSb(111) substrates by molecular beam epitaxy. CdTe/InSb heterostructures prepared under different conditions were characterized in-situ by reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy. As ex-situ characterization we used atomic force microscopy (AFM) and Raman spectroscopy. According to the results, an In-Te compound (likely In2Te3) is formed at the interface. The proportions of the In-Te compound and remaining oxides at the interface depend on the substrate preparation, polarity of the (111) substrate, and annealing temperature before growth. The CdTe growth is smoother on the (111)B surface. |
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