Resonant Raman scattering study of InSb etched by reactive ion beam etching
A Raman study of InSb etched by reactive ion beam etching using a CH4 /H2 /N2 plasma generated by electron cyclotron resonance is presented. The evolution of the LO, 2LO phonon and phonon plasmon coupled modes has been studied using resonant Raman spectra in different configurations. Results indicat...
| Autores: | , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 1996 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/27291 |
| Acceso en línea: | http://hdl.handle.net/10261/27291 |
| Access Level: | acceso abierto |
| Palabra clave: | Raman scattering study InSb |
| Sumario: | A Raman study of InSb etched by reactive ion beam etching using a CH4 /H2 /N2 plasma generated by electron cyclotron resonance is presented. The evolution of the LO, 2LO phonon and phonon plasmon coupled modes has been studied using resonant Raman spectra in different configurations. Results indicate an increase of the carrier density by a factor of about 60 and a decrease of the built-in potential due to the plasma process. The combination of both evolutions results in a prevalence of the electric field induced scattering upon the defect induced scattering mechanism. |
|---|