Optical properties of InSb layers confined by InP
The photoluminescence properties of InSb submonolayers and dots are presented. When the amount of InSb deposit on InP is less than 1 ML the growth mode remains two dimensional, while for greater amounts three-dimensional quantum dots are formed. Within the two-dimensional growth mode range the energ...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1997 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/27408 |
| Acceso en línea: | http://hdl.handle.net/10261/27408 |
| Access Level: | acceso abierto |
| Palabra clave: | InSb layers Photoluminescence |
| Sumario: | The photoluminescence properties of InSb submonolayers and dots are presented. When the amount of InSb deposit on InP is less than 1 ML the growth mode remains two dimensional, while for greater amounts three-dimensional quantum dots are formed. Within the two-dimensional growth mode range the energy of the InSb-related transition decreases as we increase the amount of InSb deposited within the limits of said range. No InSb absorption features have been detected. The observed photoluminescence is interpreted as a recombination of electrons in the InP layers with holes in the InSb layers. We estimate a valence-band offset of 1.525 eV, similar to the predictions of the solid-model theory (1.600 eV). In the samples with InSb dots an InSb related transition has been observed, which is attributed to the wetting layer. |
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