Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C
In this paper, we study the ambipolar behavior of a-SiGe:H thin-film transistors fabricated at 200 °C. A sub-threshold slope and an on/off current ratio of 0.34 V/DEC and 10⁵, respectively, were measured for the n-type region, whereas values of 0.15 V/DEC and 10⁴ for were measured for the p-type reg...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2012 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/2097 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2097 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Inspec/Thin-film transistor info:eu-repo/classification/Inspec/Hydrogenated amorphous info:eu-repo/classification/Inspec/Spin-On Glass info:eu-repo/classification/Inspec/Silicon–germanium info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | In this paper, we study the ambipolar behavior of a-SiGe:H thin-film transistors fabricated at 200 °C. A sub-threshold slope and an on/off current ratio of 0.34 V/DEC and 10⁵, respectively, were measured for the n-type region, whereas values of 0.15 V/DEC and 10⁴ for were measured for the p-type region. We also obtained the characteristic energies for the deep localized states of the a-SiGe:H film, the flat-band voltages, and threshold voltages among other device parameters for the ambipolar thin-film transistors. |
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