A PVT compensated active inductor based VCO on SOI CMOS technology
In this work the design of a PVT compensated active inductor based VCO is presented, with the aim of providing a robust alternative to the problem of limited tuning range of the passive LC VCO. Initially, the deferent characteristics of some typical structures of active inductors are analyzed, and s...
| Autor: | |
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| Tipo de recurso: | tesis de maestría |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2011 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/652 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/652 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Voltaje controlled oscillators/Voltaje controlled oscillators info:eu-repo/classification/Q-factor/Q-factor info:eu-repo/classification/Silicon-on-insulator/Silicon-on-insulator info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | In this work the design of a PVT compensated active inductor based VCO is presented, with the aim of providing a robust alternative to the problem of limited tuning range of the passive LC VCO. Initially, the deferent characteristics of some typical structures of active inductors are analyzed, and some factors that make this sort of circuit sensitive about PVT variations are identified. Subsequently, an active inductor based on gyrator principle, along with a bias scheme based on a PTAT active cell, a threshold shifter and an analog current switch, are proposed in order to reduce the effect of the PVT variations. The inductor is composed by a traditional differential pair with diode-connected load and a cross-coupled pair for increasing the inductive frequency range. In addition, some cross-coupling of signal are added to reduce the inductance value and the effect of the mismatch on the circuit performance. The frequency results show an inductance between 4 and 14 nH, with a maximum deviation of its nominal value (6.860 nH) of 8.81% with regard to fabrication process and temperature; meanwhile, the statistical analysis yields a mean value of 6.952 nH and an standard deviation of 0.249 nH. The power consumption of the whole active inductor is between 1 and 3.1 mW@1 V for the mentioned inductance range. The proposed inductor is inserted in a variation of the NMOS Cross-Coupled pair with current sinker. The obtained results show a center frequency of 5.36 GHz, with a phase noise of -88 dBc Hz @1 MHz. For its part, the total frequency band covers from 3.192 to 7.501 GHz, yielding a frequency tuning range of 80.39 %. On the other hand, the transient response yields an startup, transition and settling time of 250, 300 and 600 ps respectively. Lastly, the results of the statistical analysis yield a mean value and an standard deviation of 5.381 GHz and 411.03 MHz respectively for the center frequency. |
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