XANES and EXAFS study of the TiN Thin films grown by the pulsed DC sputtering technique assisted by balanced magnetron
A series of different TixNy thin films were grown by the DC-sputtering technique. The purpose for this work was to study through XAS interpretation, how the different amounts of N2 during growing thin TiN thin films, affects the stoichiometry of the TiN deposited. Also the results obtained determina...
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| Tipo de recurso: | artículo |
| Estado: | Versión enviada para evaluación y publicación |
| Fecha de publicación: | 2007 |
| País: | México |
| Institución: | Centro de Investigación en Materiales Avanzados |
| Repositorio: | Fuente de Objetos Científicos Open Access del CIMAV |
| Idioma: | inglés |
| OAI Identifier: | oai:cimav.repositorioinstitucional.mx:1004/967 |
| Acceso en línea: | http://cimav.repositorioinstitucional.mx/jspui/handle/1004/967 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Nituration/TiN info:eu-repo/classification/PLD/Thin films info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2299 info:eu-repo/classification/cti/229999 |
| Sumario: | A series of different TixNy thin films were grown by the DC-sputtering technique. The purpose for this work was to study through XAS interpretation, how the different amounts of N2 during growing thin TiN thin films, affects the stoichiometry of the TiN deposited. Also the results obtained determinate how to interpret the spectra to see the different valences of Ti in TiN, are working. The results were supported with the EXAFS and XANES analysis. This work concludes the adequated conditions for this experiment to obtain TiN as thin film by the DC sputtering assited by pulsed balanced magnetron at room temperature and aconcludes which XANES spectra are the finger print for valences of Ti |
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