Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

8 pages, 10 figures.-- PACS: 52.70.-m; 81.65.Rv; 81.15.Gh; 52.77.Dq; 52.75.-d, 85.30.Tv

Detalles Bibliográficos
Autores: Romero, M. F., Sanz, M.M., Tanarro, Isabel, Jiménez, A., Muñoz, E.
Tipo de recurso: artículo
Fecha de publicación:2010
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/30614
Acceso en línea:http://hdl.handle.net/10261/30614
Access Level:acceso abierto
Palabra clave:Electronics and devices
Semiconductors
Instrumentation and measurement
Surfaces, interfaces and thin films
Plasma physics
id ES_fdecaba1465c8a87c14cd87afac033b7
oai_identifier_str oai:digital.csic.es:10261/30614
network_acronym_str ES
network_name_str España
repository_id_str
spelling Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour depositionRomero, M. F.Sanz, M.M.Tanarro, IsabelJiménez, A.Muñoz, E.Electronics and devicesSemiconductorsInstrumentation and measurementSurfaces, interfaces and thin filmsPlasma physics8 pages, 10 figures.-- PACS: 52.70.-m; 81.65.Rv; 81.15.Gh; 52.77.Dq; 52.75.-d, 85.30.TvIn this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH4 and NH3 precursors and the formation of H2 and N2 have been analysed by mass spectrometry as a function of the NH3/SiH4 flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.This work was supported in part by the KORRIGAN project (EDA—04/102.052/032 CA 2157v7) and in part by the projects ICTS-2007-05, MAT2007-65965, FIS 2007-61686 and CSD2009-00038 of the MICINN of Spain.Peer reviewedInstitute of Physics Publishing201020102010info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/30614reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1088/0022-3727/43/49/495202info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/306142026-05-22T06:33:51Z
dc.title.none.fl_str_mv Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition
title Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition
spellingShingle Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition
Romero, M. F.
Electronics and devices
Semiconductors
Instrumentation and measurement
Surfaces, interfaces and thin films
Plasma physics
title_short Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition
title_full Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition
title_fullStr Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition
title_full_unstemmed Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition
title_sort Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition
dc.creator.none.fl_str_mv Romero, M. F.
Sanz, M.M.
Tanarro, Isabel
Jiménez, A.
Muñoz, E.
author Romero, M. F.
author_facet Romero, M. F.
Sanz, M.M.
Tanarro, Isabel
Jiménez, A.
Muñoz, E.
author_role author
author2 Sanz, M.M.
Tanarro, Isabel
Jiménez, A.
Muñoz, E.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Electronics and devices
Semiconductors
Instrumentation and measurement
Surfaces, interfaces and thin films
Plasma physics
topic Electronics and devices
Semiconductors
Instrumentation and measurement
Surfaces, interfaces and thin films
Plasma physics
description 8 pages, 10 figures.-- PACS: 52.70.-m; 81.65.Rv; 81.15.Gh; 52.77.Dq; 52.75.-d, 85.30.Tv
publishDate 2010
dc.date.none.fl_str_mv 2010
2010
2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/30614
url http://hdl.handle.net/10261/30614
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1088/0022-3727/43/49/495202
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Institute of Physics Publishing
publisher.none.fl_str_mv Institute of Physics Publishing
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869425610658414592
score 15.812455

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