Romero, M. F., Sanz, M., Tanarro, I., Jiménez, A., & Muñoz, E. (2010). Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition.
Citación estilo ChicagoRomero, M. F., M.M Sanz, Isabel Tanarro, A. Jiménez, y E. Muñoz. Plasma Diagnostics and Device Properties of AlGaN/GaN HEMT Passivated With SiN Deposited By Plasma-enhanced Chemical Vapour Deposition. 2010.
Cita MLARomero, M. F., et al. Plasma Diagnostics and Device Properties of AlGaN/GaN HEMT Passivated With SiN Deposited By Plasma-enhanced Chemical Vapour Deposition. 2010.
Precaución: Estas citas no son 100% exactas.