Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size

SiNx:H films have been deposited using two different ECR plasma sources attached to a similar deposition chamber, a Compact source and an AX4500 source both from Astex. The sources mainly differ in the discharge volume, 55 cm(3) and 936 cm(3), respectively. Microwave power and N-2/SiH4 gases now rat...

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Detalles Bibliográficos
Autores: Martil De La Plaza, Ignacio, González Díaz, Germán, García, S., Martín, J.M.
Tipo de recurso: artículo
Fecha de publicación:1998
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59297
Acceso en línea:https://hdl.handle.net/20.500.14352/59297
Access Level:acceso abierto
Palabra clave:537
Electron-Cyclotron-Resonance
Silicon-Nitride Films
Hydrogen Content
CVD.
Electricidad
Electrónica (Física)
2202.03 Electricidad
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oai_identifier_str oai:docta.ucm.es:20.500.14352/59297
network_acronym_str ES
network_name_str España
repository_id_str
spelling Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge sizeMartil De La Plaza, IgnacioGonzález Díaz, GermánGarcía, S.Martín, J.M.537Electron-Cyclotron-ResonanceSilicon-Nitride FilmsHydrogen ContentCVD.ElectricidadElectrónica (Física)2202.03 ElectricidadSiNx:H films have been deposited using two different ECR plasma sources attached to a similar deposition chamber, a Compact source and an AX4500 source both from Astex. The sources mainly differ in the discharge volume, 55 cm(3) and 936 cm(3), respectively. Microwave power and N-2/SiH4 gases now ratio have been varied to deposit the films. Deposition rate, infrared absorption spectra, refractive index (n), and optical band gap (E-g) of the films have been measured. Optical diagnosis spectra of the discharges have been recorded during the depositions. Different performances of the sources reflected in the film characteristics have been found. The properties of the films deposited using the Compact source correspond to films with compositions that range from Si-rich to near stoichiometric ones, while when using the AX4500 reactor, the film properties correspond to compositions close to the stoichiometric films or to N-rich ones. When changing from the Compact source to the AX4500 reactor, the signal corresponding to N-2(+) ions and to the excited species, N-2(+) are higher in the AX 4500 than in the Compact one, the deposition rate being higher in the AX 4500 source. The different performances of the sources have been attributed to the different discharge size and diffusion length, being optimal in the case of the AX4500 source.Elsevier Science SAUniversidad Complutense de Madrid19981998-03-0219981998-03-02journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59297reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/592972026-06-02T12:44:21Z
dc.title.none.fl_str_mv Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size
title Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size
spellingShingle Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size
Martil De La Plaza, Ignacio
537
Electron-Cyclotron-Resonance
Silicon-Nitride Films
Hydrogen Content
CVD.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size
title_full Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size
title_fullStr Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size
title_full_unstemmed Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size
title_sort Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size
dc.creator.none.fl_str_mv Martil De La Plaza, Ignacio
González Díaz, Germán
García, S.
Martín, J.M.
author Martil De La Plaza, Ignacio
author_facet Martil De La Plaza, Ignacio
González Díaz, Germán
García, S.
Martín, J.M.
author_role author
author2 González Díaz, Germán
García, S.
Martín, J.M.
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Electron-Cyclotron-Resonance
Silicon-Nitride Films
Hydrogen Content
CVD.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Electron-Cyclotron-Resonance
Silicon-Nitride Films
Hydrogen Content
CVD.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description SiNx:H films have been deposited using two different ECR plasma sources attached to a similar deposition chamber, a Compact source and an AX4500 source both from Astex. The sources mainly differ in the discharge volume, 55 cm(3) and 936 cm(3), respectively. Microwave power and N-2/SiH4 gases now ratio have been varied to deposit the films. Deposition rate, infrared absorption spectra, refractive index (n), and optical band gap (E-g) of the films have been measured. Optical diagnosis spectra of the discharges have been recorded during the depositions. Different performances of the sources reflected in the film characteristics have been found. The properties of the films deposited using the Compact source correspond to films with compositions that range from Si-rich to near stoichiometric ones, while when using the AX4500 reactor, the film properties correspond to compositions close to the stoichiometric films or to N-rich ones. When changing from the Compact source to the AX4500 reactor, the signal corresponding to N-2(+) ions and to the excited species, N-2(+) are higher in the AX 4500 than in the Compact one, the deposition rate being higher in the AX 4500 source. The different performances of the sources have been attributed to the different discharge size and diffusion length, being optimal in the case of the AX4500 source.
publishDate 1998
dc.date.none.fl_str_mv 1998
1998-03-02
1998
1998-03-02
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59297
url https://hdl.handle.net/20.500.14352/59297
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier Science SA
publisher.none.fl_str_mv Elsevier Science SA
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869425353206792192
score 15,300724

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