Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation
Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section. These tests led to cross-section values two orders of...
| Autores: | , , , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2014 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/33823 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/33823 |
| Access Level: | acceso abierto |
| Palabra clave: | 537.8 CMOS integrated circuits DRAM chips SRAM chips Capacitors Contamination Neutron effects Radiation hardening (electronics) CMOS SRAM COTS soft-error free SRAM DRAM capacitors MUSCA SEP3 simulations SRAM cells Cross-section values Electron volt energy 15 MeV High-energy neutrons Memory cell design Neutron radiation Radiation tests Radioactive contamination Error analysis Neutrons Reliability Single event upsets COTS LPSRAM MUSCA SEP3 SRAM Neutron tests Radiation hardness Soft error Electrónica (Física) Circuitos integrados 2203.07 Circuitos Integrados |
| Sumario: | Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section. These tests led to cross-section values two orders of magnitude below those of typical CMOS SRAMs in the same technology node. MUSCA SEP3 simulations complement these results predicting that only high-energy neutrons ( > 30 MeV) can provoke bit flips in the studied SRAMs. MUSCA SEP3 is also used to investigate the sensitivity of the studied SRAM to radioactive contamination and to compare it with the one of standard CMOS SRAMs. Results are useful to make predictions about the operation of this memory in environments such as avionics. |
|---|