Neutron-Induced single events in a COTS soft-error free SRAM at low bias voltage

This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event...

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Bibliographic Details
Authors: Clemente Barreira, Juan Antonio, Franco Peláez, Francisco Javier, Vila, Francesca, Baylac, Maud, Ramos Vargas, Pablo Francisco, Vargas Vallejo, Vanessa Carolina, Mecha López, Hortensia, Agapito Serrano, Juan Andrés, Velazco, Raoul
Format: book part
Publication Date:2015
Country:España
Institution:Universidad Complutense de Madrid (UCM)
Repository:Docta Complutense
Language:English
OAI Identifier:oai:docta.ucm.es:20.500.14352/24709
Online Access:https://hdl.handle.net/20.500.14352/24709
Access Level:Open access
Keyword:537.8
539.16
621.3.049.77
COTS
LPSRAM
Neutron tests
Radiation hardness
Reliability
Soft error
SRAM
Electrónica (Física)
Radiactividad
Circuitos integrados
2203.07 Circuitos Integrados
Description
Summary:This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.

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