Neutron-Induced single events in a COTS soft-error free SRAM at low bias voltage

This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event...

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Detalles Bibliográficos
Autores: Clemente Barreira, Juan Antonio, Franco Peláez, Francisco Javier, Vila, Francesca, Baylac, Maud, Ramos Vargas, Pablo Francisco, Vargas Vallejo, Vanessa Carolina, Mecha López, Hortensia, Agapito Serrano, Juan Andrés, Velazco, Raoul
Tipo de recurso: capítulo de libro
Fecha de publicación:2015
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/24709
Acceso en línea:https://hdl.handle.net/20.500.14352/24709
Access Level:acceso abierto
Palabra clave:537.8
539.16
621.3.049.77
COTS
LPSRAM
Neutron tests
Radiation hardness
Reliability
Soft error
SRAM
Electrónica (Física)
Radiactividad
Circuitos integrados
2203.07 Circuitos Integrados
Descripción
Sumario:This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.

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