SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2 MeV Neutrons
This paper presents a SEU sensitivity characterization at ultra-low bias voltage of three generations of COTS SRAMs manufactured in 130 nm, 90 nm and 65 nm CMOS processes. For this purpose, radiation tests with 14.2 MeV neutrons were performed for SRAM power supplies ranging from 0.5 V to 3.15 V. Th...
| Autores: | , , , , , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | español |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/11974 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/11974 |
| Access Level: | acceso abierto |
| Palavra-chave: | COTS SRAM neutron tests radiation hard- ness reliability soft error low-bias voltage Física nuclear Circuitos integrados Hardware Electrónica (Informática) 2207 Física Atómica y Nuclear 2203.07 Circuitos Integrados 2203 Electrónica |
| Resumo: | This paper presents a SEU sensitivity characterization at ultra-low bias voltage of three generations of COTS SRAMs manufactured in 130 nm, 90 nm and 65 nm CMOS processes. For this purpose, radiation tests with 14.2 MeV neutrons were performed for SRAM power supplies ranging from 0.5 V to 3.15 V. The experimental results yielded clear evidences of the SEU sensitivity increase at very low bias voltages. These results have been cross-checked with predictions issued from the modeling tool MUlti-SCAles Single Event Phenomena Predictive Platform (MUSCA-SEP3). Large-scale SELs and SEFIs, observed in the 90-nm and 130-nm SRAMs respectively, are also presented and discussed. |
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