Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources
We present experimental results of soft errors produced by proton and neutron irradiation of minimum-size six-transistors (6T) and eight-transistors (8T) bit-cells SRAM memories produced with 65 nm CMOS technology using an 18 MeV proton beam and a neutron beam of 4.3–8.5 MeV. All experiments have be...
| Autores: | , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/182307 |
| Acceso en línea: | https://hdl.handle.net/11441/182307 https://doi.org/10.1016/j.microrel.2017.07.093 |
| Access Level: | acceso abierto |
| Palabra clave: | Soft errors Single Event Effects Single Event Upset Radiation effects SRAM Neutrons |
| Sumario: | We present experimental results of soft errors produced by proton and neutron irradiation of minimum-size six-transistors (6T) and eight-transistors (8T) bit-cells SRAM memories produced with 65 nm CMOS technology using an 18 MeV proton beam and a neutron beam of 4.3–8.5 MeV. All experiments have been carried out at the National Center of Accelerators (CNA) in Seville, Spain. Similar soft error rate levels have been observed for both cell designs despite the larger area occupied by the 8T cells, although the trend for multiple events has been higher in 6T. |
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