Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs

In this paper, the impact of majority carriers introduced into the film by gate-body Electron Valence Band (EVB) tunneling in ultrathin gate oxide (2.5 nm) PD SOI MOSFETs is studied by analyzing "switch-off" drain current (Id) transients measured with different front gate voltage steps and...

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Detalles Bibliográficos
Autores: Rafí, Joan Marc, Mercha, A., Simoen, E., Claeys, C.
Tipo de recurso: artículo
Fecha de publicación:2004
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/256994
Acceso en línea:http://hdl.handle.net/10261/256994
http://www.scopus.com/inward/record.url?eid=2-s2.0-1842832725&partnerID=MN8TOARS
Access Level:acceso abierto
Palabra clave:Drain current transients | Floating body effects | Generation lifetime | Recombination lifetime | Silicon on insulator (SOI) MOSFETs
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spelling Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETsRafí, Joan MarcMercha, A.Simoen, E.Claeys, C.Drain current transients | Floating body effects | Generation lifetime | Recombination lifetime | Silicon on insulator (SOI) MOSFETsIn this paper, the impact of majority carriers introduced into the film by gate-body Electron Valence Band (EVB) tunneling in ultrathin gate oxide (2.5 nm) PD SOI MOSFETs is studied by analyzing "switch-off" drain current (Id) transients measured with different front gate voltage steps and drain bias (Vd) conditions. A change in the Id transients shape from undershoot to overshoot is appreciated at low Vd for sufficiently high "on" gate voltages, which enable gate-body EVB tunneling to introduce majority carriers into the film. The shape and the transition time of these EVB-induced Id overshoots have been found to be in good agreement with conventional (EVB-free) "switch-on"-type transients, which enable the extraction of the majority carrier recombination lifetime. It has been found that the magnitude of the EVB-induced Id overshoot decreases with increasing Vd, finally resulting in an undershoot for sufficiently high Vd. In order to characterize the effect of the charges introduced into the film during the different "switch-off" conditions, an effective gate voltage overdrive (ΔVgeff) has been defined and extracted for all Id transients. It has been found that the transition from overshoot to undershoot can be explained by means of a body potential increase associated with the high Vd condition, which results in a lower gate-to-film voltage drop and a reduced EVB majority carriers injection into the film. © 2004 Elsevier Ltd. All rights reserved.Peer reviewed0000-0003-4581-9477Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202120212004info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/256994http://www.scopus.com/inward/record.url?eid=2-s2.0-1842832725&partnerID=MN8TOARSreponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésSolid-State Electronicshttps://doi.org/10.1016/j.sse.2004.01.003Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2569942026-05-22T06:33:51Z
dc.title.none.fl_str_mv Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs
title Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs
spellingShingle Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs
Rafí, Joan Marc
Drain current transients | Floating body effects | Generation lifetime | Recombination lifetime | Silicon on insulator (SOI) MOSFETs
title_short Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs
title_full Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs
title_fullStr Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs
title_full_unstemmed Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs
title_sort Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs
dc.creator.none.fl_str_mv Rafí, Joan Marc
Mercha, A.
Simoen, E.
Claeys, C.
author Rafí, Joan Marc
author_facet Rafí, Joan Marc
Mercha, A.
Simoen, E.
Claeys, C.
author_role author
author2 Mercha, A.
Simoen, E.
Claeys, C.
author2_role author
author
author
dc.contributor.none.fl_str_mv 0000-0003-4581-9477
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Drain current transients | Floating body effects | Generation lifetime | Recombination lifetime | Silicon on insulator (SOI) MOSFETs
topic Drain current transients | Floating body effects | Generation lifetime | Recombination lifetime | Silicon on insulator (SOI) MOSFETs
description In this paper, the impact of majority carriers introduced into the film by gate-body Electron Valence Band (EVB) tunneling in ultrathin gate oxide (2.5 nm) PD SOI MOSFETs is studied by analyzing "switch-off" drain current (Id) transients measured with different front gate voltage steps and drain bias (Vd) conditions. A change in the Id transients shape from undershoot to overshoot is appreciated at low Vd for sufficiently high "on" gate voltages, which enable gate-body EVB tunneling to introduce majority carriers into the film. The shape and the transition time of these EVB-induced Id overshoots have been found to be in good agreement with conventional (EVB-free) "switch-on"-type transients, which enable the extraction of the majority carrier recombination lifetime. It has been found that the magnitude of the EVB-induced Id overshoot decreases with increasing Vd, finally resulting in an undershoot for sufficiently high Vd. In order to characterize the effect of the charges introduced into the film during the different "switch-off" conditions, an effective gate voltage overdrive (ΔVgeff) has been defined and extracted for all Id transients. It has been found that the transition from overshoot to undershoot can be explained by means of a body potential increase associated with the high Vd condition, which results in a lower gate-to-film voltage drop and a reduced EVB majority carriers injection into the film. © 2004 Elsevier Ltd. All rights reserved.
publishDate 2004
dc.date.none.fl_str_mv 2004
2021
2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/256994
http://www.scopus.com/inward/record.url?eid=2-s2.0-1842832725&partnerID=MN8TOARS
url http://hdl.handle.net/10261/256994
http://www.scopus.com/inward/record.url?eid=2-s2.0-1842832725&partnerID=MN8TOARS
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Solid-State Electronics
https://doi.org/10.1016/j.sse.2004.01.003
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,81155

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