Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
The effect of hot-carrier stress on 60 MeV proton irradiated thin gate oxide partially depleted SOI nMOSFETs has been studied. The results are compared with those from the electrical stress of non-irradiated devices. Whereas no significant differences are observed for the front channel degradation,...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2007 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/256988 |
| Acceso en línea: | http://hdl.handle.net/10261/256988 https://api.elsevier.com/content/abstract/scopus_id/34248655935 |
| Access Level: | acceso abierto |
| Palabra clave: | Hot-carrier degradation | MOSFETs | Partially-depleted SOI | Radiation-induced damage | Silicon on insulator |
| Sumario: | The effect of hot-carrier stress on 60 MeV proton irradiated thin gate oxide partially depleted SOI nMOSFETs has been studied. The results are compared with those from the electrical stress of non-irradiated devices. Whereas no significant differences are observed for the front channel degradation, hot-electron trapping in the buried oxide is found to be enhanced in the irradiated devices. This hot-electron trapping leads to a compensation or neutralization of the effects caused by the radiation-induced positive trapped charges. It is shown that a similar hot-electron trapping enhancement can be achieved in non-irradiated devices stressed under certain back gate bias conditions. © 2007 Elsevier B.V. All rights reserved. |
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