Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs
In this paper, the impact of majority carriers introduced into the film by gate-body Electron Valence Band (EVB) tunneling in ultrathin gate oxide (2.5 nm) PD SOI MOSFETs is studied by analyzing "switch-off" drain current (Id) transients measured with different front gate voltage steps and...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2004 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/256994 |
| Acceso en línea: | http://hdl.handle.net/10261/256994 http://www.scopus.com/inward/record.url?eid=2-s2.0-1842832725&partnerID=MN8TOARS |
| Access Level: | acceso abierto |
| Palabra clave: | Drain current transients | Floating body effects | Generation lifetime | Recombination lifetime | Silicon on insulator (SOI) MOSFETs |
| Sumario: | In this paper, the impact of majority carriers introduced into the film by gate-body Electron Valence Band (EVB) tunneling in ultrathin gate oxide (2.5 nm) PD SOI MOSFETs is studied by analyzing "switch-off" drain current (Id) transients measured with different front gate voltage steps and drain bias (Vd) conditions. A change in the Id transients shape from undershoot to overshoot is appreciated at low Vd for sufficiently high "on" gate voltages, which enable gate-body EVB tunneling to introduce majority carriers into the film. The shape and the transition time of these EVB-induced Id overshoots have been found to be in good agreement with conventional (EVB-free) "switch-on"-type transients, which enable the extraction of the majority carrier recombination lifetime. It has been found that the magnitude of the EVB-induced Id overshoot decreases with increasing Vd, finally resulting in an undershoot for sufficiently high Vd. In order to characterize the effect of the charges introduced into the film during the different "switch-off" conditions, an effective gate voltage overdrive (ΔVgeff) has been defined and extracted for all Id transients. It has been found that the transition from overshoot to undershoot can be explained by means of a body potential increase associated with the high Vd condition, which results in a lower gate-to-film voltage drop and a reduced EVB majority carriers injection into the film. © 2004 Elsevier Ltd. All rights reserved. |
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