Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
In this study, we analyze the impact of back-channel radiation-induced leakage and back-gate bias on switch-off drain current transients of thin-gate-oxide partially depleted (PD) silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). The presence of radia...
| Autores: | , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2004 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/256992 |
| Acceso en línea: | http://hdl.handle.net/10261/256992 https://api.elsevier.com/content/abstract/scopus_id/13644275257 |
| Access Level: | acceso abierto |
| Palabra clave: | Buried oxide | Drain current transients | Floating-body effects | Generation lifetime | Proton irradiation | Radiation effects | Recombination lifetime | Silicon-on-insulator (SOI) MOSFETs |
| Sumario: | In this study, we analyze the impact of back-channel radiation-induced leakage and back-gate bias on switch-off drain current transients of thin-gate-oxide partially depleted (PD) silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). The presence of radiation-induced positive trapped charges in the buried oxide after 60 MeV proton irradiation is found to reduce the "switch-off" transient times for gate voltages above and below the front-gate threshold voltage for body-to-gate electron valence band tunnelling. An increase in steady-state drain current and an increase in the amplitude of weak inversion drain current transients are observed. A similar effect is observed when applying a positive bias to the back-gate, which is found to generate an "irradiation-like" subthreshold leakage. The observed switch-off drain current transient behavior is explained by taking into account an edge parasitic back-channel transient component, which is added to the conventional front-gate drain current transient. |
|---|