Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering

We report on the first observation of the persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on Al2O3 (001) substrates by means of conventional rf reactive sputtering under adequate deposition conditions. Spatially resolved micro-Raman spectra clearly showed that (011)...

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Authors: Matsuoka, Kohei, Okimura, Kunio, Azhan, Nurul Hanis, Zaghrioui, Mustapha, Sakai, Joe
Format: article
Status:Published version
Publication Date:2019
Country:España
Institution:Consejo Superior de Investigaciones Científicas (CSIC)
Repository:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/206445
Online Access:http://hdl.handle.net/10261/206445
Access Level:Open access
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spelling Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputteringMatsuoka, KoheiOkimura, KunioAzhan, Nurul HanisZaghrioui, MustaphaSakai, JoeWe report on the first observation of the persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on Al2O3 (001) substrates by means of conventional rf reactive sputtering under adequate deposition conditions. Spatially resolved micro-Raman spectra clearly showed that (011)-oriented large crystalline grains with the cR-axis parallel to the substrate resulted in the appearance of the M2 phase over a wide temperature range of 30 °C. A close correlation of the appearance range of the M2 phase with the in-plane tensile stress of (011)-oriented grains was revealed by X-ray diffraction. We present a phase diagram for the M1, M2, and R phases in relation to the stress of (011)-oriented grains and temperature. It was shown that (011)-oriented micrometer-sized long grains play a crucial role in the emerging structural phase transition (SPT) via an M2 phase even in a film grown on Al2O3 (001), which is ordinarily reserved for the (020)-oriented VO2 growth. The results shown here will contribute to make clear the conditions for obtaining VO2 films with the appearance of the M2 phase in their SPT process.This work was supported by a Grant-in-Aid for Scientific Research (Grant No. 15K04652) from the Japan Society for the Promotion of Science.Peer reviewedAmerican Institute of PhysicsJapan Society for the Promotion of ScienceAzhan, Nurul Hanis [0000-0003-2777-3401]Zaghrioui, Mustapha [0000-0001-9297-0503]Sakai, Joe [0000-0001-7688-0655]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202020202019info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/206445reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttps://doi.org/10.1063/1.5068700Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2064452026-05-22T06:33:51Z
dc.title.none.fl_str_mv Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering
title Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering
spellingShingle Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering
Matsuoka, Kohei
title_short Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering
title_full Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering
title_fullStr Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering
title_full_unstemmed Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering
title_sort Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering
dc.creator.none.fl_str_mv Matsuoka, Kohei
Okimura, Kunio
Azhan, Nurul Hanis
Zaghrioui, Mustapha
Sakai, Joe
author Matsuoka, Kohei
author_facet Matsuoka, Kohei
Okimura, Kunio
Azhan, Nurul Hanis
Zaghrioui, Mustapha
Sakai, Joe
author_role author
author2 Okimura, Kunio
Azhan, Nurul Hanis
Zaghrioui, Mustapha
Sakai, Joe
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Japan Society for the Promotion of Science
Azhan, Nurul Hanis [0000-0003-2777-3401]
Zaghrioui, Mustapha [0000-0001-9297-0503]
Sakai, Joe [0000-0001-7688-0655]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description We report on the first observation of the persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on Al2O3 (001) substrates by means of conventional rf reactive sputtering under adequate deposition conditions. Spatially resolved micro-Raman spectra clearly showed that (011)-oriented large crystalline grains with the cR-axis parallel to the substrate resulted in the appearance of the M2 phase over a wide temperature range of 30 °C. A close correlation of the appearance range of the M2 phase with the in-plane tensile stress of (011)-oriented grains was revealed by X-ray diffraction. We present a phase diagram for the M1, M2, and R phases in relation to the stress of (011)-oriented grains and temperature. It was shown that (011)-oriented micrometer-sized long grains play a crucial role in the emerging structural phase transition (SPT) via an M2 phase even in a film grown on Al2O3 (001), which is ordinarily reserved for the (020)-oriented VO2 growth. The results shown here will contribute to make clear the conditions for obtaining VO2 films with the appearance of the M2 phase in their SPT process.
publishDate 2019
dc.date.none.fl_str_mv 2019
2020
2020
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/206445
url http://hdl.handle.net/10261/206445
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://doi.org/10.1063/1.5068700
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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