Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering

We report on the first observation of the persistent M2 phase in strongly strained (011)-oriented grains in VO₂ films grown on Al₂O₃ (001) substrates by means of conventional rf reactive sputtering under adequate deposition conditions. Spatially resolved micro-Raman spectra clearly showed that (011)...

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Detalhes bibliográficos
Autores: Matsuoka, K., Okimura, Kunio|||0000-0002-8401-2978, Azhan, Nurul Hasnis|||0000-0003-2777-3401, Zaghrioui, Mustapha|||0000-0001-9297-0503, Sakai, Joe|||0000-0001-7688-0655
Tipo de documento: artigo
Data de publicação:2019
País:España
Recursos:Universitat Autònoma de Barcelona
Repositório:Dipòsit Digital de Documents de la UAB
Idioma:inglês
OAI Identifier:oai:ddd.uab.cat:215017
Acesso em linha:https://ddd.uab.cat/record/215017
https://dx.doi.org/urn:doi:10.1063/1.5068700
Access Level:Acceso aberto
Palavra-chave:Crystalline grains
Deposition conditions
Micro-Raman spectra
Rf Reactive sputtering
Spatially resolved
Structural phase transition
Wide temperature ranges
Descrição
Resumo:We report on the first observation of the persistent M2 phase in strongly strained (011)-oriented grains in VO₂ films grown on Al₂O₃ (001) substrates by means of conventional rf reactive sputtering under adequate deposition conditions. Spatially resolved micro-Raman spectra clearly showed that (011)-oriented large crystalline grains with the cR-axis parallel to the substrate resulted in the appearance of the M2 phase over a wide temperature range of 30 °C. A close correlation of the appearance range of the M2 phase with the in-plane tensile stress of (011)-oriented grains was revealed by X-ray diffraction. We present a phase diagram for the M1, M2, and R phases in relation to the stress of (011)-oriented grains and temperature. It was shown that (011)-oriented micrometer-sized long grains play a crucial role in the emerging structural phase transition (SPT) via an M2 phase even in a film grown on Al₂O₃ (001), which is ordinarily reserved for the (020)-oriented VO₂ growth. The results shown here will contribute to make clear the conditions for obtaining VO₂ films with the appearance of the M2 phase in their SPT process.