Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering
We report on the first observation of the persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on Al2O3 (001) substrates by means of conventional rf reactive sputtering under adequate deposition conditions. Spatially resolved micro-Raman spectra clearly showed that (011)...
| Autores: | , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2019 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/206445 |
| Acesso em linha: | http://hdl.handle.net/10261/206445 |
| Access Level: | acceso abierto |
| Resumo: | We report on the first observation of the persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on Al2O3 (001) substrates by means of conventional rf reactive sputtering under adequate deposition conditions. Spatially resolved micro-Raman spectra clearly showed that (011)-oriented large crystalline grains with the cR-axis parallel to the substrate resulted in the appearance of the M2 phase over a wide temperature range of 30 °C. A close correlation of the appearance range of the M2 phase with the in-plane tensile stress of (011)-oriented grains was revealed by X-ray diffraction. We present a phase diagram for the M1, M2, and R phases in relation to the stress of (011)-oriented grains and temperature. It was shown that (011)-oriented micrometer-sized long grains play a crucial role in the emerging structural phase transition (SPT) via an M2 phase even in a film grown on Al2O3 (001), which is ordinarily reserved for the (020)-oriented VO2 growth. The results shown here will contribute to make clear the conditions for obtaining VO2 films with the appearance of the M2 phase in their SPT process. |
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