Approaching ultrathin VO2films on sapphire (001) substrates by biased reactive sputtering: Characteristic morphology and its effect on the infrared-light switching
Ultrathin VO2 films with insulator-metal transition (IMT) were successfully fabricated on sapphire (001) substrates by utilizing radio frequency-biased reactive sputtering. We realized a 6 nm-thick VO2 film that shows resistance change over 2 orders of magnitude. Microscopic observations combined wi...
| Autores: | , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2021 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/264197 |
| Acesso em linha: | http://hdl.handle.net/10261/264197 |
| Access Level: | acceso abierto |
| Palavra-chave: | Thin films Thermal effects Atomic force microscopy Crystal structures X-ray diffraction Sputter deposition Oxides Raman spectroscopy Scanning electron microscopy Tensile stress |
| Resumo: | Ultrathin VO2 films with insulator-metal transition (IMT) were successfully fabricated on sapphire (001) substrates by utilizing radio frequency-biased reactive sputtering. We realized a 6 nm-thick VO2 film that shows resistance change over 2 orders of magnitude. Microscopic observations combined with energy dispersive x-ray analyses revealed characteristic networking morphology in VO2 films with thickness up to around 10 nm. It was found through micro-Raman analyses that a 30 nm-thick film possessed flat surface and ordered lattice with strong in-plane tensile stress. We evaluated the thickness dependence of optical switching performance for infrared-light. The results suggest that the thickness of the VO2 films should be carefully selected for realizing required performances of optical switching, which depends on not only IMT but also characteristic morphological aspects. |
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