Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)

The Sn/Ge(111) interface has been investigated across the 3 x 3 -->, root 3 x root 3 R30 degrees phase transition using core level and valence band photoemission spectroscopies. We find, both above and below the transition, two different components in the Sn 4d core level and a bond splitting in...

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Detalles Bibliográficos
Autores: Avila, J., Mascaraque Susunaga, Arantzazu, Michel, E. G., Asensio, M. C., LeLay, G., Ortega Villafuerte, Yanicet, Perez, R., Flores, F.
Tipo de recurso: artículo
Fecha de publicación:1999
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59420
Acceso en línea:https://hdl.handle.net/20.500.14352/59420
Access Level:acceso abierto
Palabra clave:538.9
Charge-Density-Wave
Sn/Ge(111)
Photoemission
Spectroscopy
Dimers
Física de materiales
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spelling Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)Avila, J.Mascaraque Susunaga, ArantzazuMichel, E. G.Asensio, M. C.LeLay, G.Ortega Villafuerte, YanicetPerez, R.Flores, F.538.9Charge-Density-WaveSn/Ge(111)PhotoemissionSpectroscopyDimersFísica de materialesThe Sn/Ge(111) interface has been investigated across the 3 x 3 -->, root 3 x root 3 R30 degrees phase transition using core level and valence band photoemission spectroscopies. We find, both above and below the transition, two different components in the Sn 4d core level and a bond splitting in the surface state crossing the Fermi energy. Theoretical calculations show that these two effects are due to the existence of two structurally different kinds of Sn atoms that fluctuate at room temperature between two positions and are stabilized in a 3 x 3 structure at low temperature.American Physical SocietyUniversidad Complutense de Madrid19991999-01-1119991999-01-11journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59420reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/594202026-06-02T12:44:21Z
dc.title.none.fl_str_mv Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)
title Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)
spellingShingle Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)
Avila, J.
538.9
Charge-Density-Wave
Sn/Ge(111)
Photoemission
Spectroscopy
Dimers
Física de materiales
title_short Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)
title_full Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)
title_fullStr Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)
title_full_unstemmed Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)
title_sort Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)
dc.creator.none.fl_str_mv Avila, J.
Mascaraque Susunaga, Arantzazu
Michel, E. G.
Asensio, M. C.
LeLay, G.
Ortega Villafuerte, Yanicet
Perez, R.
Flores, F.
author Avila, J.
author_facet Avila, J.
Mascaraque Susunaga, Arantzazu
Michel, E. G.
Asensio, M. C.
LeLay, G.
Ortega Villafuerte, Yanicet
Perez, R.
Flores, F.
author_role author
author2 Mascaraque Susunaga, Arantzazu
Michel, E. G.
Asensio, M. C.
LeLay, G.
Ortega Villafuerte, Yanicet
Perez, R.
Flores, F.
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Charge-Density-Wave
Sn/Ge(111)
Photoemission
Spectroscopy
Dimers
Física de materiales
topic 538.9
Charge-Density-Wave
Sn/Ge(111)
Photoemission
Spectroscopy
Dimers
Física de materiales
description The Sn/Ge(111) interface has been investigated across the 3 x 3 -->, root 3 x root 3 R30 degrees phase transition using core level and valence band photoemission spectroscopies. We find, both above and below the transition, two different components in the Sn 4d core level and a bond splitting in the surface state crossing the Fermi energy. Theoretical calculations show that these two effects are due to the existence of two structurally different kinds of Sn atoms that fluctuate at room temperature between two positions and are stabilized in a 3 x 3 structure at low temperature.
publishDate 1999
dc.date.none.fl_str_mv 1999
1999-01-11
1999
1999-01-11
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59420
url https://hdl.handle.net/20.500.14352/59420
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869424649156165632
score 15,300719

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