Solid-source molecular-beam epitaxy for monolithic integration of laser emitters and photodetectors on GaAs chips
A solid-source molecular beam epitaxy has been used to grow Al-free InGaP/GaAs/InGaAs in-plane side emitting laser (IPSELs) devices on foundry available GaAs integrated circuits (IC) chips with integrated metal–semiconductor–metal photodetectors. The GaAs IC chips were cleaned at low temperature (47...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2000 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/25752 |
| Acceso en línea: | http://hdl.handle.net/10261/25752 |
| Access Level: | acceso abierto |
| Palabra clave: | Optoelectronic devices Molecular beam epitaxial growth Gallium arsenide Semiconductor lasers Integrated circuits Light sources Photodetectors Metal-semiconductor-metal structures |
| Sumario: | A solid-source molecular beam epitaxy has been used to grow Al-free InGaP/GaAs/InGaAs in-plane side emitting laser (IPSELs) devices on foundry available GaAs integrated circuits (IC) chips with integrated metal–semiconductor–metal photodetectors. The GaAs IC chips were cleaned at low temperature (470 °C) by monoatomic hydrogen prior to epitaxy. Br2 reactive ion etching was used after growth to make laser facets and parabolic mirrors for vertical emission. Using these techniques, we obtained laser emission from the integrated IPSEL devices, suggesting that these devices may be an alternative approach to that offered by vertical cavity surface emitting lasers in the fabrication of optoelectronic integrated devices. |
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