Photodetector fabrication by dielectrophoretic assembly of GaAs nanowires grown by a two-steps method

Carlos García Núñez, Alejandro F. Braña, Nair López, José L. Pau, Basilio J. García, "Photodetector fabrication by dielectrophoretic assembly of GaAs nanowires grown by a two-steps method", Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications. Proc. SPIE 1...

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Detalles Bibliográficos
Autores: García Núñez, Carlos, Braña de Cal, Alejandro Francisco, López, Nair, Pau Vizcaíno, José Luis, García Carretero, Basilio Javier
Tipo de recurso: artículo
Fecha de publicación:2017
País:España
Institución:Universidad Autónoma de Madrid
Repositorio:Biblos-e Archivo. Repositorio Institucional de la UAM
Idioma:inglés
OAI Identifier:oai:repositorio.uam.es:10486/681720
Acceso en línea:http://hdl.handle.net/10486/681720
https://dx.doi.org/10.1117/12.2274007
Access Level:acceso abierto
Palabra clave:Chemical beam epitaxy
Dielectrophoresis
Photodetector
Semiconductor nanowire
Física
Descripción
Sumario:Carlos García Núñez, Alejandro F. Braña, Nair López, José L. Pau, Basilio J. García, "Photodetector fabrication by dielectrophoretic assembly of GaAs nanowires grown by a two-steps method", Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications. Proc. SPIE 10353 (29 August 2017); doi: 10.1117/12.2274007. Copyright 2017 Society of Photo-Optical Instrumentation Engineers, One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited