Photodetector fabrication by dielectrophoretic assembly of GaAs nanowires grown by a two-steps method
Carlos García Núñez, Alejandro F. Braña, Nair López, José L. Pau, Basilio J. García, "Photodetector fabrication by dielectrophoretic assembly of GaAs nanowires grown by a two-steps method", Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications. Proc. SPIE 1...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/681720 |
| Acceso en línea: | http://hdl.handle.net/10486/681720 https://dx.doi.org/10.1117/12.2274007 |
| Access Level: | acceso abierto |
| Palabra clave: | Chemical beam epitaxy Dielectrophoresis Photodetector Semiconductor nanowire Física |
| Sumario: | Carlos García Núñez, Alejandro F. Braña, Nair López, José L. Pau, Basilio J. García, "Photodetector fabrication by dielectrophoretic assembly of GaAs nanowires grown by a two-steps method", Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications. Proc. SPIE 10353 (29 August 2017); doi: 10.1117/12.2274007. Copyright 2017 Society of Photo-Optical Instrumentation Engineers, One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited |
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