High resolution electron microscopy of GaAs capped GaSb nanostructures
We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small (with heights of about 1 nm) GaAsxSb1−x nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsxSb1−x nanostructur...
| Autores: | , , , , , , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2009 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositório: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/23507 |
| Acesso em linha: | http://hdl.handle.net/10261/23507 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Gallium arsenide Gallium compounds III-V semiconductors Nanostructured materials Nanotechnology Scanning-transmission electron microscopy Semiconductor epitaxial layers Semiconductor growth |
| Resumo: | We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small (with heights of about 1 nm) GaAsxSb1−x nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsxSb1−x nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process. |
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