Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs....

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Detalhes bibliográficos
Autores: Gao, Z., Romero, M.F., Pampillón Arce, María Ángela, San Andrés Serrano, Enrique, Calle, F.
Formato: artículo
Fecha de publicación:2015
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/35230
Acesso em linha:https://hdl.handle.net/20.500.14352/35230
Access Level:acceso abierto
Palavra-chave:537
AlGaM/GaN
Gd2O3
HEMTs
MOS-HEMTs
Thermal stability
Hig-k dielectric.
Electricidad
Electrónica (Física)
2202.03 Electricidad
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oai_identifier_str oai:docta.ucm.es:20.500.14352/35230
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repository_id_str
spelling Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectricGao, Z.Romero, M.F.Pampillón Arce, María ÁngelaSan Andrés Serrano, EnriqueCalle, F.537AlGaM/GaNGd2O3HEMTsMOS-HEMTsThermal stabilityHig-k dielectric.ElectricidadElectrónica (Física)2202.03 ElectricidadThermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd_(2)O_(3) dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 108 and a stable V_(t) is observed after storage at high temperature. The beneficial effects of Gd_(2)O_(3) on trapping effects of MOS-HEMTs are also dis-cussed.IEEEUniversidad Complutense de Madrid20152015-01-0120152015-01-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/35230reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/352302026-06-02T12:44:21Z
dc.title.none.fl_str_mv Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
title Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
spellingShingle Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
Gao, Z.
537
AlGaM/GaN
Gd2O3
HEMTs
MOS-HEMTs
Thermal stability
Hig-k dielectric.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
title_full Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
title_fullStr Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
title_full_unstemmed Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
title_sort Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
dc.creator.none.fl_str_mv Gao, Z.
Romero, M.F.
Pampillón Arce, María Ángela
San Andrés Serrano, Enrique
Calle, F.
author Gao, Z.
author_facet Gao, Z.
Romero, M.F.
Pampillón Arce, María Ángela
San Andrés Serrano, Enrique
Calle, F.
author_role author
author2 Romero, M.F.
Pampillón Arce, María Ángela
San Andrés Serrano, Enrique
Calle, F.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
AlGaM/GaN
Gd2O3
HEMTs
MOS-HEMTs
Thermal stability
Hig-k dielectric.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
AlGaM/GaN
Gd2O3
HEMTs
MOS-HEMTs
Thermal stability
Hig-k dielectric.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd_(2)O_(3) dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 108 and a stable V_(t) is observed after storage at high temperature. The beneficial effects of Gd_(2)O_(3) on trapping effects of MOS-HEMTs are also dis-cussed.
publishDate 2015
dc.date.none.fl_str_mv 2015
2015-01-01
2015
2015-01-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/35230
url https://hdl.handle.net/20.500.14352/35230
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869421895902822400
score 15,301603

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