Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence

Cathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs: Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. positron lifetime measurements do not sho...

Descripción completa

Detalles Bibliográficos
Autores: Méndez Martín, María Bianchi, Piqueras De Noriega, Francisco Javier, Domínguez-Adame Acosta, Francisco, De Diego, N.
Tipo de recurso: artículo
Fecha de publicación:1988
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59001
Acceso en línea:https://hdl.handle.net/20.500.14352/59001
Access Level:acceso abierto
Palabra clave:538.9
Physics
Applied
Física de materiales
id ES_d9f30b02a7bf0ffb8e401b62732c7d08
oai_identifier_str oai:docta.ucm.es:20.500.14352/59001
network_acronym_str ES
network_name_str España
repository_id_str
spelling Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescenceMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierDomínguez-Adame Acosta, FranciscoDe Diego, N.538.9PhysicsAppliedFísica de materialesCathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs: Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higer vacancy concentration has been detected in the Te-doped samples relative to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes.Amer Inst PhysicsUniversidad Complutense de Madrid19881988-11-0119881988-11-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59001reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/590012026-06-02T12:44:21Z
dc.title.none.fl_str_mv Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
title Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
spellingShingle Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
Méndez Martín, María Bianchi
538.9
Physics
Applied
Física de materiales
title_short Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
title_full Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
title_fullStr Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
title_full_unstemmed Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
title_sort Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
dc.creator.none.fl_str_mv Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Domínguez-Adame Acosta, Francisco
De Diego, N.
author Méndez Martín, María Bianchi
author_facet Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Domínguez-Adame Acosta, Francisco
De Diego, N.
author_role author
author2 Piqueras De Noriega, Francisco Javier
Domínguez-Adame Acosta, Francisco
De Diego, N.
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Physics
Applied
Física de materiales
topic 538.9
Physics
Applied
Física de materiales
description Cathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs: Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higer vacancy concentration has been detected in the Te-doped samples relative to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes.
publishDate 1988
dc.date.none.fl_str_mv 1988
1988-11-01
1988
1988-11-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59001
url https://hdl.handle.net/20.500.14352/59001
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Amer Inst Physics
publisher.none.fl_str_mv Amer Inst Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869421483079499776
score 15,300719

Similares en LA Referencia