Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers
Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the...
| Authors: | , |
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| Format: | article |
| Publication Date: | 1991 |
| Country: | España |
| Institution: | Universidad Complutense de Madrid (UCM) |
| Repository: | Docta Complutense |
| Language: | English |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/58998 |
| Online Access: | https://hdl.handle.net/20.500.14352/58998 |
| Access Level: | Open access |
| Keyword: | 538.9 Spatial-Distribution Física de materiales |
| Summary: | Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape. |
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