Study of point defects in CdTe and CdTe:V by cathodoluminescence

Cathodoluminescence in the scanning electron microscope has been used to investigate the relationship of point defects in CdTe and CdTe:V with luminescence bands at 1.40 and 1.13 eV. V has been found to inhibit the 1.40 eV luminescence. Annealing experiments indicate that Cd and Te vacancies are inv...

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Bibliographic Details
Authors: Pal, U., Piqueras De Noriega, Francisco Javier, Fernández Sánchez, Paloma, Serrano, M. D., Diéguez, E.
Format: article
Publication Date:1994
Country:España
Institution:Universidad Complutense de Madrid (UCM)
Repository:Docta Complutense
Language:English
OAI Identifier:oai:docta.ucm.es:20.500.14352/59271
Online Access:https://hdl.handle.net/20.500.14352/59271
Access Level:Open access
Keyword:538.9
Physics
Applied
Física de materiales
Description
Summary:Cathodoluminescence in the scanning electron microscope has been used to investigate the relationship of point defects in CdTe and CdTe:V with luminescence bands at 1.40 and 1.13 eV. V has been found to inhibit the 1.40 eV luminescence. Annealing experiments indicate that Cd and Te vacancies are involved in the mentioned emission bands.

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