Raman scattering of InSb quantum dots grown on InP substrates

4 pages, 4 figures.-- PACS: 78.30.Fs; 78.66.Fd; 68.65.+g; 68.35.Ja

Detalles Bibliográficos
Autores: Armelles Reig, Gaspar, Utzmeier, Thomas, Postigo, Pablo Aitor, Briones Fernández-Pola, Fernando, Ferrer, Juan Carlos, Peiró, P., Cornet, Albert
Tipo de recurso: artículo
Fecha de publicación:1997
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/21580
Acceso en línea:http://hdl.handle.net/10261/21580
Access Level:acceso abierto
Palabra clave:Indium compounds
III-V semiconductors
Raman spectra
Semiconductor quantum dots
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spelling Raman scattering of InSb quantum dots grown on InP substratesArmelles Reig, GasparUtzmeier, ThomasPostigo, Pablo AitorBriones Fernández-Pola, FernandoFerrer, Juan CarlosPeiró, P.Cornet, AlbertIndium compoundsIII-V semiconductorsRaman spectraSemiconductor quantum dots4 pages, 4 figures.-- PACS: 78.30.Fs; 78.66.Fd; 68.65.+g; 68.35.JaIn this paper we present the Raman scattering of self-assembled InSb dots grown on (001) oriented InP substrates. The samples were grown by pulsed molecular beam epitaxy mode. Two types of samples have been investigated. In one type the InSb dots were capped with 200 monolayers of InP; in the other type no capping was deposited after the InSb dot formation. We observe two peaks in the Raman spectra of the uncapped dot, while only one peak is observed in the Raman spectra of the capped dots. In the case of the uncapped dots the peaks are attributed to LO-like and TO-like vibration of completely relaxed InSb dots, in agreement with high resolution transmission electron microscopy photographs. The Raman spectra of the capped dot suggest a different strain state in the dot due to the capping layer.This work has been supported by CICYT under project MAT95-0966 and the HCM program under network CT 330349.Peer reviewedAmerican Institute of Physics201020101997info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501512940 bytesapplication/pdfhttp://hdl.handle.net/10261/21580reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.365169info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/215802026-05-22T06:33:51Z
dc.title.none.fl_str_mv Raman scattering of InSb quantum dots grown on InP substrates
title Raman scattering of InSb quantum dots grown on InP substrates
spellingShingle Raman scattering of InSb quantum dots grown on InP substrates
Armelles Reig, Gaspar
Indium compounds
III-V semiconductors
Raman spectra
Semiconductor quantum dots
title_short Raman scattering of InSb quantum dots grown on InP substrates
title_full Raman scattering of InSb quantum dots grown on InP substrates
title_fullStr Raman scattering of InSb quantum dots grown on InP substrates
title_full_unstemmed Raman scattering of InSb quantum dots grown on InP substrates
title_sort Raman scattering of InSb quantum dots grown on InP substrates
dc.creator.none.fl_str_mv Armelles Reig, Gaspar
Utzmeier, Thomas
Postigo, Pablo Aitor
Briones Fernández-Pola, Fernando
Ferrer, Juan Carlos
Peiró, P.
Cornet, Albert
author Armelles Reig, Gaspar
author_facet Armelles Reig, Gaspar
Utzmeier, Thomas
Postigo, Pablo Aitor
Briones Fernández-Pola, Fernando
Ferrer, Juan Carlos
Peiró, P.
Cornet, Albert
author_role author
author2 Utzmeier, Thomas
Postigo, Pablo Aitor
Briones Fernández-Pola, Fernando
Ferrer, Juan Carlos
Peiró, P.
Cornet, Albert
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Indium compounds
III-V semiconductors
Raman spectra
Semiconductor quantum dots
topic Indium compounds
III-V semiconductors
Raman spectra
Semiconductor quantum dots
description 4 pages, 4 figures.-- PACS: 78.30.Fs; 78.66.Fd; 68.65.+g; 68.35.Ja
publishDate 1997
dc.date.none.fl_str_mv 1997
2010
2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
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dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/21580
url http://hdl.handle.net/10261/21580
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1063/1.365169
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 512940 bytes
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dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
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