Raman scattering of InSb quantum dots grown on InP substrates
4 pages, 4 figures.-- PACS: 78.30.Fs; 78.66.Fd; 68.65.+g; 68.35.Ja
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1997 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/21580 |
| Acceso en línea: | http://hdl.handle.net/10261/21580 |
| Access Level: | acceso abierto |
| Palabra clave: | Indium compounds III-V semiconductors Raman spectra Semiconductor quantum dots |
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Raman scattering of InSb quantum dots grown on InP substratesArmelles Reig, GasparUtzmeier, ThomasPostigo, Pablo AitorBriones Fernández-Pola, FernandoFerrer, Juan CarlosPeiró, P.Cornet, AlbertIndium compoundsIII-V semiconductorsRaman spectraSemiconductor quantum dots4 pages, 4 figures.-- PACS: 78.30.Fs; 78.66.Fd; 68.65.+g; 68.35.JaIn this paper we present the Raman scattering of self-assembled InSb dots grown on (001) oriented InP substrates. The samples were grown by pulsed molecular beam epitaxy mode. Two types of samples have been investigated. In one type the InSb dots were capped with 200 monolayers of InP; in the other type no capping was deposited after the InSb dot formation. We observe two peaks in the Raman spectra of the uncapped dot, while only one peak is observed in the Raman spectra of the capped dots. In the case of the uncapped dots the peaks are attributed to LO-like and TO-like vibration of completely relaxed InSb dots, in agreement with high resolution transmission electron microscopy photographs. The Raman spectra of the capped dot suggest a different strain state in the dot due to the capping layer.This work has been supported by CICYT under project MAT95-0966 and the HCM program under network CT 330349.Peer reviewedAmerican Institute of Physics201020101997info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501512940 bytesapplication/pdfhttp://hdl.handle.net/10261/21580reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.365169info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/215802026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Raman scattering of InSb quantum dots grown on InP substrates |
| title |
Raman scattering of InSb quantum dots grown on InP substrates |
| spellingShingle |
Raman scattering of InSb quantum dots grown on InP substrates Armelles Reig, Gaspar Indium compounds III-V semiconductors Raman spectra Semiconductor quantum dots |
| title_short |
Raman scattering of InSb quantum dots grown on InP substrates |
| title_full |
Raman scattering of InSb quantum dots grown on InP substrates |
| title_fullStr |
Raman scattering of InSb quantum dots grown on InP substrates |
| title_full_unstemmed |
Raman scattering of InSb quantum dots grown on InP substrates |
| title_sort |
Raman scattering of InSb quantum dots grown on InP substrates |
| dc.creator.none.fl_str_mv |
Armelles Reig, Gaspar Utzmeier, Thomas Postigo, Pablo Aitor Briones Fernández-Pola, Fernando Ferrer, Juan Carlos Peiró, P. Cornet, Albert |
| author |
Armelles Reig, Gaspar |
| author_facet |
Armelles Reig, Gaspar Utzmeier, Thomas Postigo, Pablo Aitor Briones Fernández-Pola, Fernando Ferrer, Juan Carlos Peiró, P. Cornet, Albert |
| author_role |
author |
| author2 |
Utzmeier, Thomas Postigo, Pablo Aitor Briones Fernández-Pola, Fernando Ferrer, Juan Carlos Peiró, P. Cornet, Albert |
| author2_role |
author author author author author author |
| dc.subject.none.fl_str_mv |
Indium compounds III-V semiconductors Raman spectra Semiconductor quantum dots |
| topic |
Indium compounds III-V semiconductors Raman spectra Semiconductor quantum dots |
| description |
4 pages, 4 figures.-- PACS: 78.30.Fs; 78.66.Fd; 68.65.+g; 68.35.Ja |
| publishDate |
1997 |
| dc.date.none.fl_str_mv |
1997 2010 2010 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 |
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article |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/21580 |
| url |
http://hdl.handle.net/10261/21580 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
http://dx.doi.org/10.1063/1.365169 |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
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512940 bytes application/pdf |
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American Institute of Physics |
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American Institute of Physics |
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reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
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Consejo Superior de Investigaciones Científicas (CSIC) |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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1869421236627439616 |
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15,81155 |