Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters
We present second-order photon correlation measurements on single InP/(Ga,In)P quantum dots as a function of temperature. Low background emission allows to obtain antibunching minima g(2)(0) below 0.25 up to 45 K. The antibunching time R increases or decreases with temperature depending on the quant...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2009 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/18076 |
| Acceso en línea: | http://hdl.handle.net/10261/18076 |
| Access Level: | acceso abierto |
| Palabra clave: | Excitons Gallium compounds III-V semiconductors Indium compounds Semiconductor quantum dots |
| Sumario: | We present second-order photon correlation measurements on single InP/(Ga,In)P quantum dots as a function of temperature. Low background emission allows to obtain antibunching minima g(2)(0) below 0.25 up to 45 K. The antibunching time R increases or decreases with temperature depending on the quantum-dot size. The two trends result from a competition between hole thermal excitation and dark-to-bright exciton transitions. The former prevails in smaller dots showing increasing R with temperature, while the latter dominates in larger quantum dots showing decreasing R with temperature. |
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