Growth and characterization of (InSb)m(InP)n short period superlattices
Short period superlattices of (InSb)m(InP)n were grown on semi-insulating (001) InP substrates by atomic layer molecular beam epitaxy. High resolution x-ray diffractometry was used to study the structural quality of the superlattices. Raman spectroscopy, in conjunction with theoretical calculations,...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1997 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/27335 |
| Acceso en línea: | http://hdl.handle.net/10261/27335 |
| Access Level: | acceso abierto |
| Palabra clave: | Indium compounds III-V semiconductors, |
| Sumario: | Short period superlattices of (InSb)m(InP)n were grown on semi-insulating (001) InP substrates by atomic layer molecular beam epitaxy. High resolution x-ray diffractometry was used to study the structural quality of the superlattices. Raman spectroscopy, in conjunction with theoretical calculations, provided information about intermixing at the interfaces |
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