CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging

In this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation of the two MOSFETs is also measured as variations of their threshold voltage a...

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Autores: Crespo Yepes, Albert|||0000-0003-4618-651X, Nasarre Campo, Carles, Garsot, N., Martin Martinez, Javier|||0000-0001-5938-5898, Rodríguez Martínez, Rosana|||0000-0002-4565-6703, Barajas, Enrique|||0000-0002-2072-2268, Aragones, Xavier|||0000-0003-1352-8675, Mateo, Diego|||0000-0001-5996-9092, Nafria, Montserrat|||0000-0002-9549-2890
Tipo de recurso: artículo
Fecha de publicación:2022
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:283506
Acceso en línea:https://ddd.uab.cat/record/283506
https://dx.doi.org/urn:doi:10.1016/j.sse.2022.108264
Access Level:acceso abierto
Palabra clave:Aging
BTI
CMOS inverter
Degradation
Device-circuit aging correlations
Hot-carrier injection
Off-state stress
id ES_d8d9627e07ea53371df6889646eff8b4
oai_identifier_str oai:ddd.uab.cat:283506
network_acronym_str ES
network_name_str España
repository_id_str
spelling CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs agingCrespo Yepes, Albert|||0000-0003-4618-651XNasarre Campo, CarlesGarsot, N.Martin Martinez, Javier|||0000-0001-5938-5898Rodríguez Martínez, Rosana|||0000-0002-4565-6703Barajas, Enrique|||0000-0002-2072-2268Aragones, Xavier|||0000-0003-1352-8675Mateo, Diego|||0000-0001-5996-9092Nafria, Montserrat|||0000-0002-9549-2890AgingBTICMOS inverterDegradationDevice-circuit aging correlationsHot-carrier injectionOff-state stressIn this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation of the two MOSFETs is also measured as variations of their threshold voltage and mobility. The relationships between the observed transistors and circuit parameter shifts are explained in terms of the different device aging mechanisms (i.e., BTI, CHI and OFF-state) that are active depending on the voltages at the circuit terminals. Moreover, the combined effects of the aging mechanisms that are sequentially activated, at device and circuit levels, and their voltage dependence, are also discussed. Finally, a power law fitting of the inversion voltage degradation of the inverter is used to evaluate its variation at operating conditions. 22022-01-0120222022-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/283506https://dx.doi.org/urn:doi:10.1016/j.sse.2022.108264reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengAgencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-103869RB-C32open accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.https://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2835062026-06-06T12:50:31Z
dc.title.none.fl_str_mv CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
title CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
spellingShingle CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
Crespo Yepes, Albert|||0000-0003-4618-651X
Aging
BTI
CMOS inverter
Degradation
Device-circuit aging correlations
Hot-carrier injection
Off-state stress
title_short CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
title_full CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
title_fullStr CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
title_full_unstemmed CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
title_sort CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
dc.creator.none.fl_str_mv Crespo Yepes, Albert|||0000-0003-4618-651X
Nasarre Campo, Carles
Garsot, N.
Martin Martinez, Javier|||0000-0001-5938-5898
Rodríguez Martínez, Rosana|||0000-0002-4565-6703
Barajas, Enrique|||0000-0002-2072-2268
Aragones, Xavier|||0000-0003-1352-8675
Mateo, Diego|||0000-0001-5996-9092
Nafria, Montserrat|||0000-0002-9549-2890
author Crespo Yepes, Albert|||0000-0003-4618-651X
author_facet Crespo Yepes, Albert|||0000-0003-4618-651X
Nasarre Campo, Carles
Garsot, N.
Martin Martinez, Javier|||0000-0001-5938-5898
Rodríguez Martínez, Rosana|||0000-0002-4565-6703
Barajas, Enrique|||0000-0002-2072-2268
Aragones, Xavier|||0000-0003-1352-8675
Mateo, Diego|||0000-0001-5996-9092
Nafria, Montserrat|||0000-0002-9549-2890
author_role author
author2 Nasarre Campo, Carles
Garsot, N.
Martin Martinez, Javier|||0000-0001-5938-5898
Rodríguez Martínez, Rosana|||0000-0002-4565-6703
Barajas, Enrique|||0000-0002-2072-2268
Aragones, Xavier|||0000-0003-1352-8675
Mateo, Diego|||0000-0001-5996-9092
Nafria, Montserrat|||0000-0002-9549-2890
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Aging
BTI
CMOS inverter
Degradation
Device-circuit aging correlations
Hot-carrier injection
Off-state stress
topic Aging
BTI
CMOS inverter
Degradation
Device-circuit aging correlations
Hot-carrier injection
Off-state stress
description In this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation of the two MOSFETs is also measured as variations of their threshold voltage and mobility. The relationships between the observed transistors and circuit parameter shifts are explained in terms of the different device aging mechanisms (i.e., BTI, CHI and OFF-state) that are active depending on the voltages at the circuit terminals. Moreover, the combined effects of the aging mechanisms that are sequentially activated, at device and circuit levels, and their voltage dependence, are also discussed. Finally, a power law fitting of the inversion voltage degradation of the inverter is used to evaluate its variation at operating conditions.
publishDate 2022
dc.date.none.fl_str_mv 2
2022-01-01
2022
2022-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/283506
https://dx.doi.org/urn:doi:10.1016/j.sse.2022.108264
url https://ddd.uab.cat/record/283506
https://dx.doi.org/urn:doi:10.1016/j.sse.2022.108264
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-103869RB-C32
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869421235953205248
score 15,301603

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