Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures

Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of bandstructure engineering that is impossible in standard planar epitaxy. Nevertheless, the presence of strain and structural defects directly control the optoelectronic properties of these nanomaterial...

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Detalles Bibliográficos
Autores: Mata, María de la, Magén, César, Caroff, Philippe, Arbiol, Jordi
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2014
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/346200
Acceso en línea:http://hdl.handle.net/10261/346200
https://api.elsevier.com/content/abstract/scopus_id/84909986927
Access Level:acceso abierto
Palabra clave:Cs-corrected scanning transmission electron microscopy
III−V
Nanowire (NW)
Atomic scale
Axial heterostructures
Strain relaxation
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spelling Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructuresMata, María de laMagén, CésarCaroff, PhilippeArbiol, JordiCs-corrected scanning transmission electron microscopyIII−VNanowire (NW)Atomic scaleAxial heterostructuresStrain relaxationCombination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of bandstructure engineering that is impossible in standard planar epitaxy. Nevertheless, the presence of strain and structural defects directly control the optoelectronic properties of these nanomaterials. Understanding with atomic accuracy how mismatched heterostructures release or accommodate strain, therefore, is highly desirable. By using atomic resolution high angle annular dark field scanning transmission electron microscopy combined with geometrical phase analyses and computer simulations, we are able to establish the relaxation mechanisms (including both elastic and plastic deformations) to release the mismatch strain in axial nanowire heterostructures. Formation of misfit dislocations, diffusion of atomic species, polarity transfer, and induced structural transformations are studied with atomic resolution at the intermediate ternary interfaces. Two nanowire heterostructure systems with promising applications (InAs/InSb and GaAs/GaSb) have been selected as key examples.J.A. acknowledges the funding from the Spanish MINECO MAT2014-51480-ERC (e-ATOM), EU ERANet-RUS Project PRI-PIMERU 2011-1422, and Generalitat de Catalunya 2009SGR770 and 2014SGR1638. M.d.l.M. thanks CSIC Jae-Predoc program. P.C. would like to thank Xavier Wallart for scientific discussions, the French National Research Agency (ANR), TERADOT Project (ANR-11-JS04-002-01) and the Australian Research Council (ARC), Future Fellowship project (FT120100498), for financial support.Peer reviewedAmerican Chemical SocietyMinisterio de Economía, Industria y Competitividad (España)European CommissionGeneralitat de CatalunyaAgence Nationale de la Recherche (France)Australian Research CouncilConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202420242014info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/346200https://api.elsevier.com/content/abstract/scopus_id/84909986927reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/MINECO//MAT2014-51480-ERCNano lettershttp://doi.org/10.1021/nl503273jSíinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3462002026-05-22T06:33:51Z
dc.title.none.fl_str_mv Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures
title Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures
spellingShingle Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures
Mata, María de la
Cs-corrected scanning transmission electron microscopy
III−V
Nanowire (NW)
Atomic scale
Axial heterostructures
Strain relaxation
title_short Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures
title_full Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures
title_fullStr Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures
title_full_unstemmed Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures
title_sort Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures
dc.creator.none.fl_str_mv Mata, María de la
Magén, César
Caroff, Philippe
Arbiol, Jordi
author Mata, María de la
author_facet Mata, María de la
Magén, César
Caroff, Philippe
Arbiol, Jordi
author_role author
author2 Magén, César
Caroff, Philippe
Arbiol, Jordi
author2_role author
author
author
dc.contributor.none.fl_str_mv Ministerio de Economía, Industria y Competitividad (España)
European Commission
Generalitat de Catalunya
Agence Nationale de la Recherche (France)
Australian Research Council
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Cs-corrected scanning transmission electron microscopy
III−V
Nanowire (NW)
Atomic scale
Axial heterostructures
Strain relaxation
topic Cs-corrected scanning transmission electron microscopy
III−V
Nanowire (NW)
Atomic scale
Axial heterostructures
Strain relaxation
description Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of bandstructure engineering that is impossible in standard planar epitaxy. Nevertheless, the presence of strain and structural defects directly control the optoelectronic properties of these nanomaterials. Understanding with atomic accuracy how mismatched heterostructures release or accommodate strain, therefore, is highly desirable. By using atomic resolution high angle annular dark field scanning transmission electron microscopy combined with geometrical phase analyses and computer simulations, we are able to establish the relaxation mechanisms (including both elastic and plastic deformations) to release the mismatch strain in axial nanowire heterostructures. Formation of misfit dislocations, diffusion of atomic species, polarity transfer, and induced structural transformations are studied with atomic resolution at the intermediate ternary interfaces. Two nanowire heterostructure systems with promising applications (InAs/InSb and GaAs/GaSb) have been selected as key examples.
publishDate 2014
dc.date.none.fl_str_mv 2014
2024
2024
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/346200
https://api.elsevier.com/content/abstract/scopus_id/84909986927
url http://hdl.handle.net/10261/346200
https://api.elsevier.com/content/abstract/scopus_id/84909986927
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/MINECO//MAT2014-51480-ERC
Nano letters
http://doi.org/10.1021/nl503273j
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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