Low-Temperature Growth of Axial Si/Ge Nanowire Heterostructures Enabled by Trisilane
Axial Si/Ge heterostructure nanowires, despite their promise in applications ranging from electronics to thermal transport, remain notoriously difficult to synthesize. Here, we grow axial Si/Ge heterostructures at low temperatures using a Au catalyst with a combination of trisilane and digermane. Th...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:194885 |
| Acceso en línea: | https://ddd.uab.cat/record/194885 https://dx.doi.org/urn:doi:10.1021/acs.chemmater.6b03952 |
| Access Level: | acceso abierto |
| Palabra clave: | Composition profile Low temperature growth Low temperatures Nanowire heterostructures Precursor chemistry Semiconductor nanowire Thermal transport Vapor liquid solids |
| Sumario: | Axial Si/Ge heterostructure nanowires, despite their promise in applications ranging from electronics to thermal transport, remain notoriously difficult to synthesize. Here, we grow axial Si/Ge heterostructures at low temperatures using a Au catalyst with a combination of trisilane and digermane. This approach yields, as determined with detailed electron microscopy characterization, arrays of epitaxial Si/Ge nanowires with excellent morphologies and purely axial composition profiles. Our data indicate that heterostructure formation can occur via the vapor-liquid-solid or vapor-solid-solid mechanism. These findings highlight the importance of precursor chemistry in semiconductor nanowire synthesis and open the door to Si/Ge nanowires with programmable quantum domains. |
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