Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers
Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1991 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/58998 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/58998 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Spatial-Distribution Física de materiales |
| Sumario: | Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape. |
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