The EL2 trap in highly doped GaAs:Te
We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the ele...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1995 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59249 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59249 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Level Transient Spectroscopy Electron Traps Gaas Defect Diffusion Crystals Bulk Física de materiales |
| Sumario: | We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed. |
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