High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs

We present a detailed investigation on the formation of supersaturated GaAs using Ti+ implantation followed by nanosecond Pulsed Laser Melting (PLM). We have synthesized high-crystal quality supersaturated GaAs layers with concentrations of Ti above the insulator to metal transition (Mott limit). Th...

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Detalles Bibliográficos
Autores: Algaidy, Sari, Caudevilla Gutiérrez, David, Pérez Zenteno, Francisco José, García Hernansanz, Rodrigo, García Hemme, Eric, Olea Ariza, Javier, San Andrés Serrano, Enrique, Duarte Cano, Sebastián, Siegel, J., Gonzalo, J., Pastor Pastor, David, Prado Millán, Álvaro Del
Tipo de recurso: artículo
Fecha de publicación:2023
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/72593
Acceso en línea:https://hdl.handle.net/20.500.14352/72593
Access Level:acceso abierto
Palabra clave:537
Gallium compounds
Ion implantation
Pulsed laser melting
Supersaturated material
Titanium
Electricidad
Electrónica (Física)
2202.03 Electricidad
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oai_identifier_str oai:docta.ucm.es:20.500.14352/72593
network_acronym_str ES
network_name_str España
repository_id_str
spelling High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAsAlgaidy, SariCaudevilla Gutiérrez, DavidPérez Zenteno, Francisco JoséGarcía Hernansanz, RodrigoGarcía Hemme, EricOlea Ariza, JavierSan Andrés Serrano, EnriqueDuarte Cano, SebastiánSiegel, J.Gonzalo, J.Pastor Pastor, DavidPrado Millán, Álvaro Del537Gallium compoundsIon implantationPulsed laser meltingSupersaturated materialTitaniumElectricidadElectrónica (Física)2202.03 ElectricidadWe present a detailed investigation on the formation of supersaturated GaAs using Ti+ implantation followed by nanosecond Pulsed Laser Melting (PLM). We have synthesized high-crystal quality supersaturated GaAs layers with concentrations of Ti above the insulator to metal transition (Mott limit). The Ti-implanted concentration depth profiles after PLM obtained by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) show a redistribution of Ti impurities within the first hundred nanometers and superficial concentration up to 1 × 1021 redistrcm-3. Raman spectroscopy of these Ti supersaturated, and regrown GaAs samples shows a sharp crystalline peak and tensile strain due to the Ti lattice incorporation. Scanning Transmission Electron Microscopy (STEM) and high-resolution Transmission Electron Microscopy (TEM) images show a good GaAs crystallinity after the PLM process. Energy-Dispersive X-ray Spectroscopy (EDS) reveals an enhanced Ti signal inside bubble-like structures and an appearance of interface oxide layer with all processed samples.Elsevier Science LtdUniversidad Complutense de Madrid20232023-10-3120232023-10-31journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/72593reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Atribución-NoComercial-SinDerivadas 3.0 Españahttps://creativecommons.org/licenses/by-nc-nd/3.0/es/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/725932026-06-02T12:44:21Z
dc.title.none.fl_str_mv High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
title High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
spellingShingle High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
Algaidy, Sari
537
Gallium compounds
Ion implantation
Pulsed laser melting
Supersaturated material
Titanium
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
title_full High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
title_fullStr High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
title_full_unstemmed High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
title_sort High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
dc.creator.none.fl_str_mv Algaidy, Sari
Caudevilla Gutiérrez, David
Pérez Zenteno, Francisco José
García Hernansanz, Rodrigo
García Hemme, Eric
Olea Ariza, Javier
San Andrés Serrano, Enrique
Duarte Cano, Sebastián
Siegel, J.
Gonzalo, J.
Pastor Pastor, David
Prado Millán, Álvaro Del
author Algaidy, Sari
author_facet Algaidy, Sari
Caudevilla Gutiérrez, David
Pérez Zenteno, Francisco José
García Hernansanz, Rodrigo
García Hemme, Eric
Olea Ariza, Javier
San Andrés Serrano, Enrique
Duarte Cano, Sebastián
Siegel, J.
Gonzalo, J.
Pastor Pastor, David
Prado Millán, Álvaro Del
author_role author
author2 Caudevilla Gutiérrez, David
Pérez Zenteno, Francisco José
García Hernansanz, Rodrigo
García Hemme, Eric
Olea Ariza, Javier
San Andrés Serrano, Enrique
Duarte Cano, Sebastián
Siegel, J.
Gonzalo, J.
Pastor Pastor, David
Prado Millán, Álvaro Del
author2_role author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Gallium compounds
Ion implantation
Pulsed laser melting
Supersaturated material
Titanium
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Gallium compounds
Ion implantation
Pulsed laser melting
Supersaturated material
Titanium
Electricidad
Electrónica (Física)
2202.03 Electricidad
description We present a detailed investigation on the formation of supersaturated GaAs using Ti+ implantation followed by nanosecond Pulsed Laser Melting (PLM). We have synthesized high-crystal quality supersaturated GaAs layers with concentrations of Ti above the insulator to metal transition (Mott limit). The Ti-implanted concentration depth profiles after PLM obtained by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) show a redistribution of Ti impurities within the first hundred nanometers and superficial concentration up to 1 × 1021 redistrcm-3. Raman spectroscopy of these Ti supersaturated, and regrown GaAs samples shows a sharp crystalline peak and tensile strain due to the Ti lattice incorporation. Scanning Transmission Electron Microscopy (STEM) and high-resolution Transmission Electron Microscopy (TEM) images show a good GaAs crystallinity after the PLM process. Energy-Dispersive X-ray Spectroscopy (EDS) reveals an enhanced Ti signal inside bubble-like structures and an appearance of interface oxide layer with all processed samples.
publishDate 2023
dc.date.none.fl_str_mv 2023
2023-10-31
2023
2023-10-31
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/72593
url https://hdl.handle.net/20.500.14352/72593
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución-NoComercial-SinDerivadas 3.0 España
https://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución-NoComercial-SinDerivadas 3.0 España
https://creativecommons.org/licenses/by-nc-nd/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Ltd
publisher.none.fl_str_mv Elsevier Science Ltd
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.301603

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