Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap
Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration be...
| Autores: | , , , , , , , , , |
|---|---|
| Tipo de documento: | artigo |
| Data de publicação: | 2016 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositório: | Docta Complutense |
| Idioma: | inglês |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/24643 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/24643 |
| Access Level: | Acceso aberto |
| Palavra-chave: | 537 Silicon Supersaturated Titanium Photoresponse Electricidad Electromagnetismo Electrónica (Física) 2202.03 Electricidad 2202 Electromagnetismo |
| Resumo: | Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors. |
|---|