Optical studies of GaAs quantum wells strained to GaP
Quantum wells of GaAs lattice matched to GaP have been studied by photoluminescence and electroreflectance. The quantum well thickness was varied between 1 and 6 monolayers in steps of 1 monolayer. Electron-hole transitions have been observed involving states both in the X band and in the Γ band, wh...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1997 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/27323 |
| Acceso en línea: | http://hdl.handle.net/10261/27323 |
| Access Level: | acceso abierto |
| Palabra clave: | Gallium arsenide Gallium compounds III-V semiconductors Semiconductor quantum wells |
| Sumario: | Quantum wells of GaAs lattice matched to GaP have been studied by photoluminescence and electroreflectance. The quantum well thickness was varied between 1 and 6 monolayers in steps of 1 monolayer. Electron-hole transitions have been observed involving states both in the X band and in the Γ band, which have been modeled using a k.p. model in conjunction with the envelope function approximation. Overall agreement between theory and experiment is found using an unstrained valence band offset of 0.6 eV. |
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