Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm

Producción Científica

Detalles Bibliográficos
Autores: Pelaz Montes, María Lourdes, Marqués Cuesta, Luis Alberto, Aboy Cebrián, María, Santos Tejido, Iván, López Martín, Pedro, Duffy, Ray
Tipo de recurso: artículo
Fecha de publicación:2010
País:España
Institución:Universidad de Valladolid
Repositorio:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/31964
Acceso en línea:https://doi.org/10.1116/1.3231481
http://uvadoc.uva.es/handle/10324/31964
Access Level:acceso abierto
Palabra clave:Implantación de iones
Ion implantation
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spelling Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nmPelaz Montes, María LourdesMarqués Cuesta, Luis AlbertoAboy Cebrián, MaríaSantos Tejido, IvánLópez Martín, PedroDuffy, RayImplantación de ionesIon implantationProducción CientíficaIon implantation continues being the dominant technique to introduce dopants in Si devices. With the device feature size in the nanometer scale, the accurate and detailed description of as-implanted dopant and damage profiles is becoming key as advanced annealing techniques are almost diffusionless. The demanding requirements for ultrashallow junction formation are stimulating the development of improved and detailed models for molecular implants and for the kinetics of amorphous damage. Additional challenges arise in the doping of advanced architectures, such as fin field effect transistors, because the introduction of highly tilted ions is quite inefficient and, in addition, the regrowth of amorphous regions in narrow structures is hampered by the slow regrowth at free interfaces and {111} planes. Atomistic simulations play a relevant role to provide the understanding for the development of simplified physically based models computationally more efficient.Ministerio de Economía, Industria y Competitividad (Project TEC2008-06069)Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA011A09)American Vacuum Society2010info:eu-repo/semantics/articleapplication/pdfhttps://doi.org/10.1116/1.3231481http://uvadoc.uva.es/handle/10324/31964reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidIngléshttps://avs.scitation.org/doi/10.1116/1.3231481info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0/oai:uvadoc.uva.es:10324/319642026-06-13T12:44:47Z
dc.title.none.fl_str_mv Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
title Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
spellingShingle Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
Pelaz Montes, María Lourdes
Implantación de iones
Ion implantation
title_short Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
title_full Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
title_fullStr Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
title_full_unstemmed Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
title_sort Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
dc.creator.none.fl_str_mv Pelaz Montes, María Lourdes
Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
Santos Tejido, Iván
López Martín, Pedro
Duffy, Ray
author Pelaz Montes, María Lourdes
author_facet Pelaz Montes, María Lourdes
Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
Santos Tejido, Iván
López Martín, Pedro
Duffy, Ray
author_role author
author2 Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
Santos Tejido, Iván
López Martín, Pedro
Duffy, Ray
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Implantación de iones
Ion implantation
topic Implantación de iones
Ion implantation
description Producción Científica
publishDate 2010
dc.date.none.fl_str_mv 2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://doi.org/10.1116/1.3231481
http://uvadoc.uva.es/handle/10324/31964
url https://doi.org/10.1116/1.3231481
http://uvadoc.uva.es/handle/10324/31964
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://avs.scitation.org/doi/10.1116/1.3231481
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Vacuum Society
publisher.none.fl_str_mv American Vacuum Society
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
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