Direct imaging of quantum wires nucleated at diatomic steps

Atomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for stra...

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Autores: Molina, Sergio I., Varela, María, Sales, David L., Ben, Teresa, Pizarro, J., Galindo, P. L., Fuster, David, González Díez, Yolanda, González Sotos, Luisa, Pennycook, Stephen J.
Tipo de recurso: artículo
Fecha de publicación:2007
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/11966
Acceso en línea:http://hdl.handle.net/10261/11966
Access Level:acceso abierto
Palabra clave:Atomic force microscopy
III-V semiconductors
Indium compounds
Internal stresses
Molecular beam epitaxial growth
Nanowires
Nucleation
Scanning-transmission electron microscopy
Self-assembly
Semiconductor growth
Semiconductor quantum wires
Stress relaxation
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spelling Direct imaging of quantum wires nucleated at diatomic stepsMolina, Sergio I.Varela, MaríaSales, David L.Ben, TeresaPizarro, J.Galindo, P. L.Fuster, DavidGonzález Díez, YolandaGonzález Sotos, LuisaPennycook, Stephen J.Atomic force microscopyIII-V semiconductorsIndium compoundsInternal stressesMolecular beam epitaxial growthNanowiresNucleationScanning-transmission electron microscopySelf-assemblySemiconductor growthSemiconductor quantum wiresStress relaxationAtomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for strain-induced nucleation comes from the direct observation by postgrowth, atomic resolution, Z-contrast imaging of an InAs-rich region in a nanowire located on the upper terrace surface of an interfacial diatomic step.This work was supported by the DOE Office of Basic Energy Sciences, Division of Materials Sciences and Engineering (MV and SJP), the SANDiE European Network of Excellence (Contract No. NMP4-CT-2004-500101), the Spanish MEC (TEC2005-05781-C03-01 y 02, NAN2004-09109-C04-01, and Consolider-Ingenio 2010 CSD2006-00019), the CAM (S 0505ESP 0200), and the Junta de Andalucia (PAI research groups TEP-120 and TIC-145; Project No. PAI05-TEP-00383).Peer reviewedAmerican Institute of Physics200920092007info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501473031 bytesapplication/pdfhttp://hdl.handle.net/10261/11966reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.2790483http://link.aip.orginfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/119662026-05-22T06:33:51Z
dc.title.none.fl_str_mv Direct imaging of quantum wires nucleated at diatomic steps
title Direct imaging of quantum wires nucleated at diatomic steps
spellingShingle Direct imaging of quantum wires nucleated at diatomic steps
Molina, Sergio I.
Atomic force microscopy
III-V semiconductors
Indium compounds
Internal stresses
Molecular beam epitaxial growth
Nanowires
Nucleation
Scanning-transmission electron microscopy
Self-assembly
Semiconductor growth
Semiconductor quantum wires
Stress relaxation
title_short Direct imaging of quantum wires nucleated at diatomic steps
title_full Direct imaging of quantum wires nucleated at diatomic steps
title_fullStr Direct imaging of quantum wires nucleated at diatomic steps
title_full_unstemmed Direct imaging of quantum wires nucleated at diatomic steps
title_sort Direct imaging of quantum wires nucleated at diatomic steps
dc.creator.none.fl_str_mv Molina, Sergio I.
Varela, María
Sales, David L.
Ben, Teresa
Pizarro, J.
Galindo, P. L.
Fuster, David
González Díez, Yolanda
González Sotos, Luisa
Pennycook, Stephen J.
author Molina, Sergio I.
author_facet Molina, Sergio I.
Varela, María
Sales, David L.
Ben, Teresa
Pizarro, J.
Galindo, P. L.
Fuster, David
González Díez, Yolanda
González Sotos, Luisa
Pennycook, Stephen J.
author_role author
author2 Varela, María
Sales, David L.
Ben, Teresa
Pizarro, J.
Galindo, P. L.
Fuster, David
González Díez, Yolanda
González Sotos, Luisa
Pennycook, Stephen J.
author2_role author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Atomic force microscopy
III-V semiconductors
Indium compounds
Internal stresses
Molecular beam epitaxial growth
Nanowires
Nucleation
Scanning-transmission electron microscopy
Self-assembly
Semiconductor growth
Semiconductor quantum wires
Stress relaxation
topic Atomic force microscopy
III-V semiconductors
Indium compounds
Internal stresses
Molecular beam epitaxial growth
Nanowires
Nucleation
Scanning-transmission electron microscopy
Self-assembly
Semiconductor growth
Semiconductor quantum wires
Stress relaxation
description Atomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for strain-induced nucleation comes from the direct observation by postgrowth, atomic resolution, Z-contrast imaging of an InAs-rich region in a nanowire located on the upper terrace surface of an interfacial diatomic step.
publishDate 2007
dc.date.none.fl_str_mv 2007
2009
2009
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/11966
url http://hdl.handle.net/10261/11966
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1063/1.2790483
http://link.aip.org
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 473031 bytes
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.812429

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