Direct imaging of quantum wires nucleated at diatomic steps

Atomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for stra...

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Bibliographic Details
Authors: Molina, Sergio I., Varela, María, Sales, David L., Ben, Teresa, Pizarro, J., Galindo, P. L., Fuster, David, González Díez, Yolanda, González Sotos, Luisa, Pennycook, Stephen J.
Format: article
Publication Date:2007
Country:España
Institution:Consejo Superior de Investigaciones Científicas (CSIC)
Repository:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/11966
Online Access:http://hdl.handle.net/10261/11966
Access Level:Open access
Keyword:Atomic force microscopy
III-V semiconductors
Indium compounds
Internal stresses
Molecular beam epitaxial growth
Nanowires
Nucleation
Scanning-transmission electron microscopy
Self-assembly
Semiconductor growth
Semiconductor quantum wires
Stress relaxation
Description
Summary:Atomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for strain-induced nucleation comes from the direct observation by postgrowth, atomic resolution, Z-contrast imaging of an InAs-rich region in a nanowire located on the upper terrace surface of an interfacial diatomic step.

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