Direct imaging of quantum wires nucleated at diatomic steps
Atomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for stra...
| Autores: | , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2007 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/11966 |
| Acceso en línea: | http://hdl.handle.net/10261/11966 |
| Access Level: | acceso abierto |
| Palabra clave: | Atomic force microscopy III-V semiconductors Indium compounds Internal stresses Molecular beam epitaxial growth Nanowires Nucleation Scanning-transmission electron microscopy Self-assembly Semiconductor growth Semiconductor quantum wires Stress relaxation |
| Sumario: | Atomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for strain-induced nucleation comes from the direct observation by postgrowth, atomic resolution, Z-contrast imaging of an InAs-rich region in a nanowire located on the upper terrace surface of an interfacial diatomic step. |
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