InAs/InP single quantum wire formation and emission at 1.5 µm
Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution opt...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2006 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/17550 |
| Acceso en línea: | http://hdl.handle.net/10261/17550 |
| Access Level: | acceso abierto |
| Palabra clave: | Indium compounds III-V semiconductors Semiconductor quantum wires Atomic force microscopy Photoluminescence Self-assembly Semiconductor growth Monolayers Molecular beam epitaxial growth |
| Sumario: | Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 µm. Additional sharp features are related to monolayer fluctuations of the two-dimensional InAs layer present during the early stages of the quantum wire self-assembling process. |
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