Active gate drivers for high-frequency application of SiC MOSFETs

The trend in the development of power converters is focused on efficient systems with high power density, reliability and low cost. The challenges to cover the new power converters requirements are mainly concentered on the use of new switching-device technologies such as silicon carbide MOSFETs (Si...

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Autor: Paredes Camacho, Alejandro
Formato: tesis doctoral
Estado:Versión publicada
Fecha de publicación:2020
País:España
Recursos:CBUC, CESCA
Repositorio:TDR. Tesis Doctorales en Red
OAI Identifier:oai:www.tdx.cat:10803/669291
Acesso em linha:http://hdl.handle.net/10803/669291
https://dx.doi.org/10.5821/dissertation-2117-328186
Access Level:acceso abierto
Palavra-chave:Electromagnetic interference
Silicon carbide
High frequency converters
SiC MOSFETs
Gate drivers
Wide-bandgap devices
Controladores de puerta
Interferencia electromagnética
Convertidores de alta frecuencia
Dispositivos de banda ancha prohibida
Àrees temàtiques de la UPC::Enginyeria electrònica
621.3
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repository_id_str
dc.title.none.fl_str_mv Active gate drivers for high-frequency application of SiC MOSFETs
title Active gate drivers for high-frequency application of SiC MOSFETs
spellingShingle Active gate drivers for high-frequency application of SiC MOSFETs
Paredes Camacho, Alejandro
Electromagnetic interference
Silicon carbide
High frequency converters
SiC MOSFETs
Gate drivers
Wide-bandgap devices
Controladores de puerta
Interferencia electromagnética
Convertidores de alta frecuencia
Dispositivos de banda ancha prohibida
Àrees temàtiques de la UPC::Enginyeria electrònica
621.3
title_short Active gate drivers for high-frequency application of SiC MOSFETs
title_full Active gate drivers for high-frequency application of SiC MOSFETs
title_fullStr Active gate drivers for high-frequency application of SiC MOSFETs
title_full_unstemmed Active gate drivers for high-frequency application of SiC MOSFETs
title_sort Active gate drivers for high-frequency application of SiC MOSFETs
dc.creator.none.fl_str_mv Paredes Camacho, Alejandro
author Paredes Camacho, Alejandro
author_facet Paredes Camacho, Alejandro
author_role author
dc.contributor.none.fl_str_mv Romeral Martínez, José Luis
Sala, Vicenç M.
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.subject.none.fl_str_mv Electromagnetic interference
Silicon carbide
High frequency converters
SiC MOSFETs
Gate drivers
Wide-bandgap devices
Controladores de puerta
Interferencia electromagnética
Convertidores de alta frecuencia
Dispositivos de banda ancha prohibida
Àrees temàtiques de la UPC::Enginyeria electrònica
621.3
topic Electromagnetic interference
Silicon carbide
High frequency converters
SiC MOSFETs
Gate drivers
Wide-bandgap devices
Controladores de puerta
Interferencia electromagnética
Convertidores de alta frecuencia
Dispositivos de banda ancha prohibida
Àrees temàtiques de la UPC::Enginyeria electrònica
621.3
description The trend in the development of power converters is focused on efficient systems with high power density, reliability and low cost. The challenges to cover the new power converters requirements are mainly concentered on the use of new switching-device technologies such as silicon carbide MOSFETs (SiC). SiC MOSFETs have better characteristics than their silicon counterparts; they have low conduction resistance, can work at higher switching speeds and can operate at higher temperature and voltage levels. Despite the advantages of SiC transistors, operating at high switching frequencies, with these devices, reveal new challenges. The fast switching speeds of SiC MOSFETs can cause over-voltages and over-currents that lead to electromagnetic interference (EMI) problems. For this reason, gate drivers (GD) development is a fundamental stage in SiC MOSFETs circuitry design. The reduction of the problems at high switching frequencies, thus increasing their performance, will allow to take advantage of these devices and achieve more efficient and high power density systems. This Thesis consists of a study, design and development of active gate drivers (AGDs) aimed to improve the switching performance of SiC MOSFETs applied to high-frequency power converters. Every developed stage regarding the GDs is validated through tests and experimental studies. In addition, the developed GDs are applied to converters for wireless charging systems of electric vehicle batteries. The results show the effectiveness of the proposed GDs and their viability in power converters based on SiC MOSFET devices.
publishDate 2020
dc.date.none.fl_str_mv 2020
2020
2020
dc.type.none.fl_str_mv info:eu-repo/semantics/doctoralThesis
info:eu-repo/semantics/publishedVersion
format doctoralThesis
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10803/669291
https://dx.doi.org/10.5821/dissertation-2117-328186
url http://hdl.handle.net/10803/669291
https://dx.doi.org/10.5821/dissertation-2117-328186
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 103 p.
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Universitat Politècnica de Catalunya
publisher.none.fl_str_mv Universitat Politècnica de Catalunya
dc.source.none.fl_str_mv TDX (Tesis Doctorals en Xarxa)
reponame:TDR. Tesis Doctorales en Red
instname:CBUC, CESCA
instname_str CBUC, CESCA
reponame_str TDR. Tesis Doctorales en Red
collection TDR. Tesis Doctorales en Red
repository.name.fl_str_mv
repository.mail.fl_str_mv
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spelling Active gate drivers for high-frequency application of SiC MOSFETsParedes Camacho, AlejandroElectromagnetic interferenceSilicon carbideHigh frequency convertersSiC MOSFETsGate driversWide-bandgap devicesControladores de puertaInterferencia electromagnéticaConvertidores de alta frecuenciaDispositivos de banda ancha prohibidaÀrees temàtiques de la UPC::Enginyeria electrònica621.3The trend in the development of power converters is focused on efficient systems with high power density, reliability and low cost. The challenges to cover the new power converters requirements are mainly concentered on the use of new switching-device technologies such as silicon carbide MOSFETs (SiC). SiC MOSFETs have better characteristics than their silicon counterparts; they have low conduction resistance, can work at higher switching speeds and can operate at higher temperature and voltage levels. Despite the advantages of SiC transistors, operating at high switching frequencies, with these devices, reveal new challenges. The fast switching speeds of SiC MOSFETs can cause over-voltages and over-currents that lead to electromagnetic interference (EMI) problems. For this reason, gate drivers (GD) development is a fundamental stage in SiC MOSFETs circuitry design. The reduction of the problems at high switching frequencies, thus increasing their performance, will allow to take advantage of these devices and achieve more efficient and high power density systems. This Thesis consists of a study, design and development of active gate drivers (AGDs) aimed to improve the switching performance of SiC MOSFETs applied to high-frequency power converters. Every developed stage regarding the GDs is validated through tests and experimental studies. In addition, the developed GDs are applied to converters for wireless charging systems of electric vehicle batteries. The results show the effectiveness of the proposed GDs and their viability in power converters based on SiC MOSFET devices.La tendencia en el diseño y desarrollo de convertidores de potencia está enfocada en realizar sistemas eficientes con alta densidad de potencia, fiabilidad y bajo costo. Los retos para cubrir esta tendencia están centrados principalmente en el uso de nuevas tecnologías de dispositivos de conmutación tales como, MOSFETs de carburo de silicio (SiC). Los MOSFETs de SiC presentan mejores características que sus homólogos de silicio; tienen baja resistencia de conducción, pueden trabajar a mayores velocidades de conmutación y pueden operar a mayores niveles de temperatura y tensión. A pesar de las ventajas de los transistores de SiC, existen problemas que se manifiestan cuando estos dispositivos operan a altas frecuencias de conmutación. Las rápidas velocidades de conmutación de los MOSFETs de SiC pueden provocar sobre-voltajes y sobre-corrientes que conllevan a problemas de interferencia electromagnética (EMI). Por tal motivo, el desarrollo de controladores de puertas es una etapa fundamental en los MOSFETs de SiC para eliminar los problemas a altas frecuencias de conmutación y aumentar su rendimiento. En consecuencia, aprovechar las ventajas de estos dispositivos y lograr sistemas más eficientes y con alta densidad de potencia. En esta tesis, se realiza un estudio, diseño y desarrollo de controladores activos de puerta para mejorar el rendimiento de conmutación de los MOSFETs de SiC aplicados a convertidores de potencia de alta frecuencia. Los controladores son validados a través de pruebas y estudios experimentales. Además, los controladores de puerta desarrollados son aplicados en convertidores para sistemas de carga inalámbrica de baterías de vehículos eléctricos. Los resultados muestran la importancia de los controladores de compuerta propuestos y su viabilidad en convertidores de potencia basados en carburo de silicio.DOCTORAT EN ENGINYERIA ELECTRÒNICA (Pla 2013)Universitat Politècnica de CatalunyaRomeral Martínez, José LuisSala, Vicenç M.Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica202020202020info:eu-repo/semantics/doctoralThesisinfo:eu-repo/semantics/publishedVersion103 p.application/pdfapplication/pdfhttp://hdl.handle.net/10803/669291https://dx.doi.org/10.5821/dissertation-2117-328186TDX (Tesis Doctorals en Xarxa)reponame:TDR. Tesis Doctorales en Redinstname:CBUC, CESCAInglésL'accés als continguts d'aquesta tesi queda condicionat a l'acceptació de les condicions d'ús establertes per la següent llicència Creative Commons: http://creativecommons.org/licenses/by-nc-nd/4.0/http://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:www.tdx.cat:10803/6692912026-06-14T12:46:07Z
score 15.198674

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