Improved physical models for advanced silicon device processing

Producción Científica

Detalhes bibliográficos
Autores: Pelaz Montes, María Lourdes, Marqués Cuesta, Luis Alberto, Aboy Cebrián, María, López Martín, Pedro, Santos Tejido, Iván
Tipo de documento: artigo
Data de publicação:2017
País:España
Recursos:Universidad de Valladolid
Repositório:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/28012
Acesso em linha:https://doi.org/10.1016/j.mssp.2016.11.007
http://uvadoc.uva.es/handle/10324/28012
Access Level:Acceso aberto
Palavra-chave:Silicon
Ion implantation
Silicio
Implantación de iones
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spelling Improved physical models for advanced silicon device processingPelaz Montes, María LourdesMarqués Cuesta, Luis AlbertoAboy Cebrián, MaríaLópez Martín, PedroSantos Tejido, IvánSiliconIon implantationSilicioImplantación de ionesProducción CientíficaWe review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.Ministerio de Ciencia e Innovación - FEDER (Proyect TEC2014-60694-P)Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA331U14)Elsevier2017info:eu-repo/semantics/articleapplication/pdfhttps://doi.org/10.1016/j.mssp.2016.11.007http://uvadoc.uva.es/handle/10324/28012reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidIngléshttp://www.sciencedirect.com/science/article/pii/S1369800116305066info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0/oai:uvadoc.uva.es:10324/280122026-06-13T12:44:47Z
dc.title.none.fl_str_mv Improved physical models for advanced silicon device processing
title Improved physical models for advanced silicon device processing
spellingShingle Improved physical models for advanced silicon device processing
Pelaz Montes, María Lourdes
Silicon
Ion implantation
Silicio
Implantación de iones
title_short Improved physical models for advanced silicon device processing
title_full Improved physical models for advanced silicon device processing
title_fullStr Improved physical models for advanced silicon device processing
title_full_unstemmed Improved physical models for advanced silicon device processing
title_sort Improved physical models for advanced silicon device processing
dc.creator.none.fl_str_mv Pelaz Montes, María Lourdes
Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
López Martín, Pedro
Santos Tejido, Iván
author Pelaz Montes, María Lourdes
author_facet Pelaz Montes, María Lourdes
Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
López Martín, Pedro
Santos Tejido, Iván
author_role author
author2 Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
López Martín, Pedro
Santos Tejido, Iván
author2_role author
author
author
author
dc.subject.none.fl_str_mv Silicon
Ion implantation
Silicio
Implantación de iones
topic Silicon
Ion implantation
Silicio
Implantación de iones
description Producción Científica
publishDate 2017
dc.date.none.fl_str_mv 2017
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://doi.org/10.1016/j.mssp.2016.11.007
http://uvadoc.uva.es/handle/10324/28012
url https://doi.org/10.1016/j.mssp.2016.11.007
http://uvadoc.uva.es/handle/10324/28012
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://www.sciencedirect.com/science/article/pii/S1369800116305066
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603

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