Electronic states tuning of InAs self-assembled quantum dots
3 páginas, 3 figuras.-- PACS: 778.66.Fd, 78.55.Cr, 81.15.Hi, 81.05.Ea, 73.21.-b, 85.35.Be
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1998 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/29024 |
| Acceso en línea: | http://hdl.handle.net/10261/29024 |
| Access Level: | acceso abierto |
| Palabra clave: | III-V semiconductors Indium compounds |
| id |
ES_a9074bdc1d8a32cfcefc42bba2f1547f |
|---|---|
| oai_identifier_str |
oai:digital.csic.es:10261/29024 |
| network_acronym_str |
ES |
| network_name_str |
España |
| repository_id_str |
|
| spelling |
Electronic states tuning of InAs self-assembled quantum dotsGarcía Martínez, Jorge ManuelMankad, T.Holtz, P. O.Wellmann, P. J.Petroff, Pierre M.III-V semiconductorsIndium compounds3 páginas, 3 figuras.-- PACS: 778.66.Fd, 78.55.Cr, 81.15.Hi, 81.05.Ea, 73.21.-b, 85.35.BeWe demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the growth sequence during the capping of InAs islands, allows us to tune the thickness and lateral dimensions of the QDs while keeping the wetting layer thickness constant. Using the same method but embedding the tuned InAs islands into AlAs layers allows to further blueshift the photoluminescence emission to higher energies while keeping the wetting layer thickness constant. The main process responsible for the QDs size modification is consistent with a kinetically controlled materials redistribution of the InAs islands that minimizes the energy of the epitaxial layers at the start up of the GaAs capping deposition.The authors want to acknowledge the financial support of QUEST an NSF-Science and Technology center (DMR No. 91-20007), the Linköping University (POH), the Deutsche Forschungsgemeinschaft (PJW) and the Spanish Ministry of Education and Science (JMG) for financial support.Peer reviewedAmerican Institute of Physics201020101998info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/29024reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.121583info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/290242026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Electronic states tuning of InAs self-assembled quantum dots |
| title |
Electronic states tuning of InAs self-assembled quantum dots |
| spellingShingle |
Electronic states tuning of InAs self-assembled quantum dots García Martínez, Jorge Manuel III-V semiconductors Indium compounds |
| title_short |
Electronic states tuning of InAs self-assembled quantum dots |
| title_full |
Electronic states tuning of InAs self-assembled quantum dots |
| title_fullStr |
Electronic states tuning of InAs self-assembled quantum dots |
| title_full_unstemmed |
Electronic states tuning of InAs self-assembled quantum dots |
| title_sort |
Electronic states tuning of InAs self-assembled quantum dots |
| dc.creator.none.fl_str_mv |
García Martínez, Jorge Manuel Mankad, T. Holtz, P. O. Wellmann, P. J. Petroff, Pierre M. |
| author |
García Martínez, Jorge Manuel |
| author_facet |
García Martínez, Jorge Manuel Mankad, T. Holtz, P. O. Wellmann, P. J. Petroff, Pierre M. |
| author_role |
author |
| author2 |
Mankad, T. Holtz, P. O. Wellmann, P. J. Petroff, Pierre M. |
| author2_role |
author author author author |
| dc.subject.none.fl_str_mv |
III-V semiconductors Indium compounds |
| topic |
III-V semiconductors Indium compounds |
| description |
3 páginas, 3 figuras.-- PACS: 778.66.Fd, 78.55.Cr, 81.15.Hi, 81.05.Ea, 73.21.-b, 85.35.Be |
| publishDate |
1998 |
| dc.date.none.fl_str_mv |
1998 2010 2010 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 |
| format |
article |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/29024 |
| url |
http://hdl.handle.net/10261/29024 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
http://dx.doi.org/10.1063/1.121583 |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.publisher.none.fl_str_mv |
American Institute of Physics |
| publisher.none.fl_str_mv |
American Institute of Physics |
| dc.source.none.fl_str_mv |
reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
| instname_str |
Consejo Superior de Investigaciones Científicas (CSIC) |
| reponame_str |
DIGITAL.CSIC. Repositorio Institucional del CSIC |
| collection |
DIGITAL.CSIC. Repositorio Institucional del CSIC |
| repository.name.fl_str_mv |
|
| repository.mail.fl_str_mv |
|
| _version_ |
1869415967210078208 |
| score |
15.812429 |