Gain Response and Ion Beam-Induced Donor Removal in nLGAD Detector: Global Gain Quenching

This study investigates the response of n-type low-gain avalanche detectors (nLGADs) to local ion-beam irradiation with low-penetrating 1.285-MeV gallium ions, focusing on charge collection efficiency (CCE) and gain degradation. Using the transient current technique (TCT), we present charge collecti...

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Detalles Bibliográficos
Autores: Manojlovic, Milos, Crnjac, Andreo, Moffat, Neil, Villegas, Jairo, Pintilie, Ioana, Cabruja, Enric, Pellegrini, Giulio, Hidalgo, Salvador
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/414772
Acceso en línea:http://hdl.handle.net/10261/414772
https://api.elsevier.com/content/abstract/scopus_id/105020744960
Access Level:acceso abierto
Palabra clave:Donor removal
global gain quenching (GGQ)
ion beam-induced charge (IBIC) technique
transient current technique (TCT)
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
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spelling Gain Response and Ion Beam-Induced Donor Removal in nLGAD Detector: Global Gain QuenchingManojlovic, MilosCrnjac, AndreoMoffat, NeilVillegas, JairoPintilie, IoanaCabruja, EnricPellegrini, GiulioHidalgo, SalvadorDonor removalglobal gain quenching (GGQ)ion beam-induced charge (IBIC) techniquetransient current technique (TCT)http://metadata.un.org/sdg/9Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovationThis study investigates the response of n-type low-gain avalanche detectors (nLGADs) to local ion-beam irradiation with low-penetrating 1.285-MeV gallium ions, focusing on charge collection efficiency (CCE) and gain degradation. Using the transient current technique (TCT), we present charge collection maps before and after local irradiation. A 404-nm blue laser was used in postcharacterization, with no signal detected in the damaged zones after irradiation, suggesting significant charge trapping. The results reveal a pronounced vulnerability of nLGADs, with significant gain loss observed at fluences as low as 4 × 10<sup>9</sup> ions/cm<sup>2</sup>. This study confirms that a donor removal mechanism occurs at low fluences, and we hypothesize that this effect is linked to a vacancy-mediated mechanism. In addition, we report a global reduction in CCE, suggesting a long-range impact on electric field triggered by local defects. This phenomenon is referred to as the global gain quenching (GGQ). Simulations of the electric field provide further confirmation of GGQ’s occurrence.This work was supported in part by the Spanish Ministry of Science, Innovation and Universities, under Grant MICIU/AEI/10.13039/501100011033; in part by the European Regional Development Fund (ERDF) Program “A Way of Making Europe” under Grant CEX2023-001397-M, Grant PID2021-124660OB-C22, Grant DC2021-121718-C32, Grant PID2023-148418NB-C42, and Grant PDC2023-145925-C32; and in part by the European Union’s Horizon 2020 Research and Innovation Funding Program (AIDAInnova) under Grant Agreement 101004761 and Project IFA-CERN 07/2024.Peer reviewedInstitute of Electrical and Electronics EngineersMinisterio de Ciencia, Innovación y Universidades (España)European CommissionAgencia Estatal de Investigación (España)CERN0000-0002-7936-18900000-0003-1689-50910000-0001-9732-09050000-0001-9436-21490000-0002-3857-85240000-0003-4505-64650000-0002-1606-35460000-0002-8070-3499Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202620262025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/414772https://api.elsevier.com/content/abstract/scopus_id/105020744960reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/CEX2023-001397-M/info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2021-124660OB-C22info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PDC2021-121718-C32info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PDC2023-145925-C32info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2023-148418NB-C42info:eu-repo/grantAgreement/EC/HE/101004761IEEE Sensors Journalhttps://doi.org/10.1109/JSEN.2025.3624206Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/4147722026-05-22T06:33:51Z
dc.title.none.fl_str_mv Gain Response and Ion Beam-Induced Donor Removal in nLGAD Detector: Global Gain Quenching
title Gain Response and Ion Beam-Induced Donor Removal in nLGAD Detector: Global Gain Quenching
spellingShingle Gain Response and Ion Beam-Induced Donor Removal in nLGAD Detector: Global Gain Quenching
Manojlovic, Milos
Donor removal
global gain quenching (GGQ)
ion beam-induced charge (IBIC) technique
transient current technique (TCT)
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
title_short Gain Response and Ion Beam-Induced Donor Removal in nLGAD Detector: Global Gain Quenching
title_full Gain Response and Ion Beam-Induced Donor Removal in nLGAD Detector: Global Gain Quenching
title_fullStr Gain Response and Ion Beam-Induced Donor Removal in nLGAD Detector: Global Gain Quenching
title_full_unstemmed Gain Response and Ion Beam-Induced Donor Removal in nLGAD Detector: Global Gain Quenching
title_sort Gain Response and Ion Beam-Induced Donor Removal in nLGAD Detector: Global Gain Quenching
dc.creator.none.fl_str_mv Manojlovic, Milos
Crnjac, Andreo
Moffat, Neil
Villegas, Jairo
Pintilie, Ioana
Cabruja, Enric
Pellegrini, Giulio
Hidalgo, Salvador
author Manojlovic, Milos
author_facet Manojlovic, Milos
Crnjac, Andreo
Moffat, Neil
Villegas, Jairo
Pintilie, Ioana
Cabruja, Enric
Pellegrini, Giulio
Hidalgo, Salvador
author_role author
author2 Crnjac, Andreo
Moffat, Neil
Villegas, Jairo
Pintilie, Ioana
Cabruja, Enric
Pellegrini, Giulio
Hidalgo, Salvador
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Ciencia, Innovación y Universidades (España)
European Commission
Agencia Estatal de Investigación (España)
CERN
0000-0002-7936-1890
0000-0003-1689-5091
0000-0001-9732-0905
0000-0001-9436-2149
0000-0002-3857-8524
0000-0003-4505-6465
0000-0002-1606-3546
0000-0002-8070-3499
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Donor removal
global gain quenching (GGQ)
ion beam-induced charge (IBIC) technique
transient current technique (TCT)
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
topic Donor removal
global gain quenching (GGQ)
ion beam-induced charge (IBIC) technique
transient current technique (TCT)
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
description This study investigates the response of n-type low-gain avalanche detectors (nLGADs) to local ion-beam irradiation with low-penetrating 1.285-MeV gallium ions, focusing on charge collection efficiency (CCE) and gain degradation. Using the transient current technique (TCT), we present charge collection maps before and after local irradiation. A 404-nm blue laser was used in postcharacterization, with no signal detected in the damaged zones after irradiation, suggesting significant charge trapping. The results reveal a pronounced vulnerability of nLGADs, with significant gain loss observed at fluences as low as 4 × 10<sup>9</sup> ions/cm<sup>2</sup>. This study confirms that a donor removal mechanism occurs at low fluences, and we hypothesize that this effect is linked to a vacancy-mediated mechanism. In addition, we report a global reduction in CCE, suggesting a long-range impact on electric field triggered by local defects. This phenomenon is referred to as the global gain quenching (GGQ). Simulations of the electric field provide further confirmation of GGQ’s occurrence.
publishDate 2025
dc.date.none.fl_str_mv 2025
2026
2026
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/414772
https://api.elsevier.com/content/abstract/scopus_id/105020744960
url http://hdl.handle.net/10261/414772
https://api.elsevier.com/content/abstract/scopus_id/105020744960
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
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#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/AEI/CEX2023-001397-M/
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2021-124660OB-C22
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PDC2021-121718-C32
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PDC2023-145925-C32
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2023-148418NB-C42
info:eu-repo/grantAgreement/EC/HE/101004761
IEEE Sensors Journal
https://doi.org/10.1109/JSEN.2025.3624206
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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