nLGAD gain response to low-penetrating particles
Detecting low-penetrating particles is fundamental for a wide range of applications in the fields of industry, medicine, and pure research. The Low Gain Avalanche Detector built on n-type substrates (nLGAD) is considered a good candidate for that, as it showed to have the potential to detect such pa...
| Autores: | , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/168786 |
| Acceso en línea: | https://hdl.handle.net/11441/168786 https://doi.org/10.1016/j.nima.2025.170208 |
| Access Level: | acceso abierto |
| Palabra clave: | LGAD X-rays and charged particle detectors IBIC |
| Sumario: | Detecting low-penetrating particles is fundamental for a wide range of applications in the fields of industry, medicine, and pure research. The Low Gain Avalanche Detector built on n-type substrates (nLGAD) is considered a good candidate for that, as it showed to have the potential to detect such particles with high sensitivity while avoiding the high noise levels associated with a traditional avalanche photodetector. An overview of the electrical characterization of the latest nLGAD batch fabricated at the Institute of Microelectronics of Barcelona is presented in this work. Additionally, gain response measurements for light with varying penetration depths in silicon and 600 keV protons are also presented. The results confirm the aforementioned potential of nLGADs to detect low-penetrating particles in silicon. Additionally, it was observed that the gain response of the devices is not only dependent on the penetration depth of the studied particles, but also on the nature and flux of the source. |
|---|